Epitaxial growth of ZnO films on (0001) sapphire at low temperatures by electron cyclotron resonance-assisted molecular beam epitaxy and their microstructural characterizations

Hee Bog Kang, Kiyoshi Nakamura, Sung Hwan Lim, Daisuke Shindo

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)

Abstract

The details of epitaxial growth and microstructural characteristics of ZnO films grown on (0001) sapphire were investigated using X-ray diffraction (XRD), reflection high energy electron diffraction (RHEED), and plan-view and cross-sectional transmission electron microscopy (TEM). The films were grown by electron cyclotron resonance-assisted molecular beam epitaxy (ECR-assisted MBE). The ECR-assisted MBE was found to be capable of growing high quality epitaxial ZnO films at low temperatures in comparison with chemical vapor deposition (CVD) and RF sputtering. The films exhibited a high degree of epitaxy, a sharp interface between film and substrate, and a smooth surface morphology. The TEM observations revealed that the films were epitaxial with an orientational relationship of (0001)ZnO ∥ (0001)Al2O3 and [1210]ZnO ∥ [1100]Al2O3. This is equivalent to a 30° rotation of ZnO relative to sapphire in (0001) plane.

Original languageEnglish
Pages (from-to)781-785
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume37
Issue number3 A
DOIs
Publication statusPublished - 1998 Mar

Keywords

  • ECR-assisted MBE
  • Epitaxy
  • TEM
  • Zinc oxide

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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