Epitaxial growth of zinc-blende CrAs/GaAs multilayer

M. Mizuguchi, H. Akinaga, T. Manago, K. Ono, M. Oshima, M. Shirai, M. Yuri, H. J. Lin, H. H. Hsieh, C. T. Chen

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Abstract

Zinc-blende CrAs/GaAs multilayers were grown by molecular beam epitaxy. It was certified that each CrAs layer maintains an epitaxial relationship with the zinc-blende GaAs structure judging from the reflection high-energy electron diffraction observation. The film contains thicker zinc- blende CrAs layers in total than the CrAs thin film directly grown on the GaAs substrate which has the critical thickness of 3 nm. It was clarified that the optimum thicknesses of CrAs and GaAs to keep a good epitaxial relationship are 2 ML and 2 ML, respectively. The electronic structure of the multilayer is thought to be close to that of the (Ga, Cr)As thin film which has 50% of Cr content judging from x-ray absorption spectroscopy measurements.

Original languageEnglish
Pages (from-to)7917-7919
Number of pages3
JournalJournal of Applied Physics
Volume91
Issue number10 I
DOIs
Publication statusPublished - 2002 May 15
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Mizuguchi, M., Akinaga, H., Manago, T., Ono, K., Oshima, M., Shirai, M., Yuri, M., Lin, H. J., Hsieh, H. H., & Chen, C. T. (2002). Epitaxial growth of zinc-blende CrAs/GaAs multilayer. Journal of Applied Physics, 91(10 I), 7917-7919. https://doi.org/10.1063/1.1455612