Epitaxial growth of ybacuo films on sapphire at 500°C by metalorganie chemical vapor deposition

Shunri Oda, Hideaki Zama, Tomohiko Ohtsuka, Kazuhisa Sugiyama, Takeo Hattori

    Research output: Contribution to journalArticle

    20 Citations (Scopus)

    Abstract

    Single crystalline films of YBaCuO have been epitaxially prepared for the first time on sapphire substrates at temperatures as low as 500βC by the metalorganic chemical vapor deposition method. The starting materials were Y(HFA)3, Ba(HFA)2, and Cu(AcAc)2. Deposition was carried out with an oxygen pressure of 10 Torr. Electron probe measurements and Auger electron spectroscopy suggest that the constituent of the film is YBa2Cu3Ox. Carbon has not been detected in the film. Spots and streak patterns obtained in the electron diffraction measurements suggest high crystalline quality and smoothness of the surface.

    Original languageEnglish
    Pages (from-to)L427-L429
    JournalJapanese journal of applied physics
    Volume28
    Issue number3 A
    DOIs
    Publication statusPublished - 1989 Mar

    Keywords

    • Crystal growth
    • Epitaxial growth
    • MOCVD(MOVPE)
    • Oxide superconductors
    • YBaCu0

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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