Epitaxial growth of ybacuo films on sapphire at 500°C by metalorganie chemical vapor deposition

Shunri Oda, Hideaki Zama, Tomohiko Ohtsuka, Kazuhisa Sugiyama, Takeo Hattori

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)

Abstract

Single crystalline films of YBaCuO have been epitaxially prepared for the first time on sapphire substrates at temperatures as low as 500βC by the metalorganic chemical vapor deposition method. The starting materials were Y(HFA)3, Ba(HFA)2, and Cu(AcAc)2. Deposition was carried out with an oxygen pressure of 10 Torr. Electron probe measurements and Auger electron spectroscopy suggest that the constituent of the film is YBa2Cu3Ox. Carbon has not been detected in the film. Spots and streak patterns obtained in the electron diffraction measurements suggest high crystalline quality and smoothness of the surface.

Original languageEnglish
Pages (from-to)L427-L429
JournalJapanese journal of applied physics
Volume28
Issue number3 A
DOIs
Publication statusPublished - 1989 Mar
Externally publishedYes

Keywords

  • Crystal growth
  • Epitaxial growth
  • MOCVD(MOVPE)
  • Oxide superconductors
  • YBaCu0

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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