Abstract
Single crystalline films of YBaCuO have been epitaxially prepared for the first time on sapphire substrates at temperatures as low as 500βC by the metalorganic chemical vapor deposition method. The starting materials were Y(HFA)3, Ba(HFA)2, and Cu(AcAc)2. Deposition was carried out with an oxygen pressure of 10 Torr. Electron probe measurements and Auger electron spectroscopy suggest that the constituent of the film is YBa2Cu3Ox. Carbon has not been detected in the film. Spots and streak patterns obtained in the electron diffraction measurements suggest high crystalline quality and smoothness of the surface.
| Original language | English |
|---|---|
| Pages (from-to) | L427-L429 |
| Journal | Japanese journal of applied physics |
| Volume | 28 |
| Issue number | 3 A |
| DOIs | |
| Publication status | Published - 1989 Mar |
Keywords
- Crystal growth
- Epitaxial growth
- MOCVD(MOVPE)
- Oxide superconductors
- YBaCu0
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Oda, S., Zama, H., Ohtsuka, T., Sugiyama, K., & Hattori, T. (1989). Epitaxial growth of ybacuo films on sapphire at 500°C by metalorganie chemical vapor deposition. Japanese journal of applied physics, 28(3 A), L427-L429. https://doi.org/10.1143/JJAP.28.L427