Epitaxial growth of ybacuo films on sapphire at 500°C by metalorganie chemical vapor deposition

Shunri Oda; Hideaki Zama; Tomohiko Ohtsuka; Kazuhisa Sugiyama; Takeo Hattori

doi:10.1143/JJAP.28.L427

Epitaxial growth of ybacuo films on sapphire at 500°C by metalorganie chemical vapor deposition

Shunri Oda, Hideaki Zama, Tomohiko Ohtsuka, Kazuhisa Sugiyama, Takeo Hattori

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

Single crystalline films of YBaCuO have been epitaxially prepared for the first time on sapphire substrates at temperatures as low as 500βC by the metalorganic chemical vapor deposition method. The starting materials were Y(HFA)₃, Ba(HFA)₂, and Cu(AcAc)₂. Deposition was carried out with an oxygen pressure of 10 Torr. Electron probe measurements and Auger electron spectroscopy suggest that the constituent of the film is YBa₂Cu₃O_x. Carbon has not been detected in the film. Spots and streak patterns obtained in the electron diffraction measurements suggest high crystalline quality and smoothness of the surface.

Original language	English
Pages (from-to)	L427-L429
Journal	Japanese journal of applied physics
Volume	28
Issue number	3 A
DOIs	https://doi.org/10.1143/JJAP.28.L427
Publication status	Published - 1989 Mar

Keywords

Crystal growth
Epitaxial growth
MOCVD(MOVPE)
Oxide superconductors
YBaCu0

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Epitaxial growth of ybacuo films on sapphire at 500°C by metalorganie chemical vapor deposition",

abstract = "Single crystalline films of YBaCuO have been epitaxially prepared for the first time on sapphire substrates at temperatures as low as 500βC by the metalorganic chemical vapor deposition method. The starting materials were Y(HFA)3, Ba(HFA)2, and Cu(AcAc)2. Deposition was carried out with an oxygen pressure of 10 Torr. Electron probe measurements and Auger electron spectroscopy suggest that the constituent of the film is YBa2Cu3Ox. Carbon has not been detected in the film. Spots and streak patterns obtained in the electron diffraction measurements suggest high crystalline quality and smoothness of the surface.",

keywords = "Crystal growth, Epitaxial growth, MOCVD(MOVPE), Oxide superconductors, YBaCu0",

author = "Shunri Oda and Hideaki Zama and Tomohiko Ohtsuka and Kazuhisa Sugiyama and Takeo Hattori",

year = "1989",

month = mar,

doi = "10.1143/JJAP.28.L427",

language = "English",

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T1 - Epitaxial growth of ybacuo films on sapphire at 500°C by metalorganie chemical vapor deposition

AU - Oda, Shunri

AU - Zama, Hideaki

AU - Ohtsuka, Tomohiko

AU - Sugiyama, Kazuhisa

AU - Hattori, Takeo

PY - 1989/3

Y1 - 1989/3

N2 - Single crystalline films of YBaCuO have been epitaxially prepared for the first time on sapphire substrates at temperatures as low as 500βC by the metalorganic chemical vapor deposition method. The starting materials were Y(HFA)3, Ba(HFA)2, and Cu(AcAc)2. Deposition was carried out with an oxygen pressure of 10 Torr. Electron probe measurements and Auger electron spectroscopy suggest that the constituent of the film is YBa2Cu3Ox. Carbon has not been detected in the film. Spots and streak patterns obtained in the electron diffraction measurements suggest high crystalline quality and smoothness of the surface.

AB - Single crystalline films of YBaCuO have been epitaxially prepared for the first time on sapphire substrates at temperatures as low as 500βC by the metalorganic chemical vapor deposition method. The starting materials were Y(HFA)3, Ba(HFA)2, and Cu(AcAc)2. Deposition was carried out with an oxygen pressure of 10 Torr. Electron probe measurements and Auger electron spectroscopy suggest that the constituent of the film is YBa2Cu3Ox. Carbon has not been detected in the film. Spots and streak patterns obtained in the electron diffraction measurements suggest high crystalline quality and smoothness of the surface.

KW - Crystal growth

KW - Epitaxial growth

KW - MOCVD(MOVPE)

KW - Oxide superconductors

KW - YBaCu0

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Epitaxial growth of ybacuo films on sapphire at 500°C by metalorganie chemical vapor deposition

Abstract

Keywords

ASJC Scopus subject areas

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