A 30Si epitaxial layer was grown by gas source molecular beam epitaxy (GS-MBE) using isotopically enriched 30SiH4. Its crystallinity and flatness were confirmed by reflection high-energy electron diffraction (RHEED). The concentrations of Si isotopes in the 30Si layer were measured with secondary ion mass spectrometry (SIMS). The isotope composition is 28Si:29Si:30Si = 0.05:0.07:99.88. No carbon or oxygen peaks were observed at the interface between the 30Si epitaxial layer and the substrate.
ASJC Scopus subject areas
- Physics and Astronomy(all)