Epitaxial growth of pure 30Si layers on a natural Si(100) substrate using enriched 30SiH4

Yukio Nakabayashi; Toru Segawa; Hirman I. Osman; Kazumasa Saito; Satoru Matsumoto; Junichi Murota; Kazumi Wada; Takao Abe

doi:10.1143/jjap.39.l1133

Epitaxial growth of pure ³⁰Si layers on a natural Si(100) substrate using enriched ³⁰SiH₄

Yukio Nakabayashi, Toru Segawa, Hirman I. Osman, Kazumasa Saito, Satoru Matsumoto, Junichi Murota, Kazumi Wada, Takao Abe

Research Institute of Electrical Communication (RIEC)

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9 Citations (Scopus)

Abstract

A ³⁰Si epitaxial layer was grown by gas source molecular beam epitaxy (GS-MBE) using isotopically enriched ³⁰SiH₄. Its crystallinity and flatness were confirmed by reflection high-energy electron diffraction (RHEED). The concentrations of Si isotopes in the ³⁰Si layer were measured with secondary ion mass spectrometry (SIMS). The isotope composition is ²⁸Si:²⁹Si:³⁰Si = 0.05:0.07:99.88. No carbon or oxygen peaks were observed at the interface between the ³⁰Si epitaxial layer and the substrate.

Original language	English
Pages (from-to)	L1133-L1134
Journal	Japanese journal of applied physics
Volume	39
Issue number	11 B
DOIs	https://doi.org/10.1143/jjap.39.l1133
Publication status	Published - 2000 Nov 15

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Epitaxial growth of pure ³⁰Si layers on a natural Si(100) substrate using enriched ³⁰SiH₄. / Nakabayashi, Yukio; Segawa, Toru; Osman, Hirman I.; Saito, Kazumasa; Matsumoto, Satoru; Murota, Junichi; Wada, Kazumi; Abe, Takao.

In: Japanese journal of applied physics, Vol. 39, No. 11 B, 15.11.2000, p. L1133-L1134.

Research output: Contribution to journal › Article › peer-review

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abstract = "A 30Si epitaxial layer was grown by gas source molecular beam epitaxy (GS-MBE) using isotopically enriched 30SiH4. Its crystallinity and flatness were confirmed by reflection high-energy electron diffraction (RHEED). The concentrations of Si isotopes in the 30Si layer were measured with secondary ion mass spectrometry (SIMS). The isotope composition is 28Si:29Si:30Si = 0.05:0.07:99.88. No carbon or oxygen peaks were observed at the interface between the 30Si epitaxial layer and the substrate.",

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T1 - Epitaxial growth of pure 30Si layers on a natural Si(100) substrate using enriched 30SiH4

AU - Nakabayashi, Yukio

AU - Segawa, Toru

AU - Osman, Hirman I.

AU - Saito, Kazumasa

AU - Matsumoto, Satoru

AU - Murota, Junichi

AU - Wada, Kazumi

AU - Abe, Takao

PY - 2000/11/15

Y1 - 2000/11/15

N2 - A 30Si epitaxial layer was grown by gas source molecular beam epitaxy (GS-MBE) using isotopically enriched 30SiH4. Its crystallinity and flatness were confirmed by reflection high-energy electron diffraction (RHEED). The concentrations of Si isotopes in the 30Si layer were measured with secondary ion mass spectrometry (SIMS). The isotope composition is 28Si:29Si:30Si = 0.05:0.07:99.88. No carbon or oxygen peaks were observed at the interface between the 30Si epitaxial layer and the substrate.

AB - A 30Si epitaxial layer was grown by gas source molecular beam epitaxy (GS-MBE) using isotopically enriched 30SiH4. Its crystallinity and flatness were confirmed by reflection high-energy electron diffraction (RHEED). The concentrations of Si isotopes in the 30Si layer were measured with secondary ion mass spectrometry (SIMS). The isotope composition is 28Si:29Si:30Si = 0.05:0.07:99.88. No carbon or oxygen peaks were observed at the interface between the 30Si epitaxial layer and the substrate.

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Epitaxial growth of pure ³⁰Si layers on a natural Si(100) substrate using enriched ³⁰SiH₄

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