Epitaxial growth of pure 30Si layers on a natural Si(100) substrate using enriched 30SiH4

Yukio Nakabayashi; Toru Segawa; Hirman I. Osman; Kazumasa Saito; Satoru Matsumoto; Junichi Murota; Kazumi Wada; Takao Abe

doi:10.1143/jjap.39.l1133

Epitaxial growth of pure ³⁰Si layers on a natural Si(100) substrate using enriched ³⁰SiH₄

Yukio Nakabayashi, Toru Segawa, Hirman I. Osman, Kazumasa Saito, Satoru Matsumoto, Junichi Murota, Kazumi Wada, Takao Abe

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

A ³⁰Si epitaxial layer was grown by gas source molecular beam epitaxy (GS-MBE) using isotopically enriched ³⁰SiH₄. Its crystallinity and flatness were confirmed by reflection high-energy electron diffraction (RHEED). The concentrations of Si isotopes in the ³⁰Si layer were measured with secondary ion mass spectrometry (SIMS). The isotope composition is ²⁸Si:²⁹Si:³⁰Si = 0.05:0.07:99.88. No carbon or oxygen peaks were observed at the interface between the ³⁰Si epitaxial layer and the substrate.

Original language	English
Pages (from-to)	L1133-L1134
Journal	Japanese journal of applied physics
Volume	39
Issue number	11 B
DOIs	https://doi.org/10.1143/jjap.39.l1133
Publication status	Published - 2000 Nov 15
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.39.l1133

Cite this

@article{363c73f8703c4638bb4e297c80a9479d,

title = "Epitaxial growth of pure 30Si layers on a natural Si(100) substrate using enriched 30SiH4",

abstract = "A 30Si epitaxial layer was grown by gas source molecular beam epitaxy (GS-MBE) using isotopically enriched 30SiH4. Its crystallinity and flatness were confirmed by reflection high-energy electron diffraction (RHEED). The concentrations of Si isotopes in the 30Si layer were measured with secondary ion mass spectrometry (SIMS). The isotope composition is 28Si:29Si:30Si = 0.05:0.07:99.88. No carbon or oxygen peaks were observed at the interface between the 30Si epitaxial layer and the substrate.",

author = "Yukio Nakabayashi and Toru Segawa and Osman, {Hirman I.} and Kazumasa Saito and Satoru Matsumoto and Junichi Murota and Kazumi Wada and Takao Abe",

year = "2000",

month = nov,

day = "15",

doi = "10.1143/jjap.39.l1133",

language = "English",

volume = "39",

pages = "L1133--L1134",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "11 B",

}

TY - JOUR

T1 - Epitaxial growth of pure 30Si layers on a natural Si(100) substrate using enriched 30SiH4

AU - Nakabayashi, Yukio

AU - Segawa, Toru

AU - Osman, Hirman I.

AU - Saito, Kazumasa

AU - Matsumoto, Satoru

AU - Murota, Junichi

AU - Wada, Kazumi

AU - Abe, Takao

PY - 2000/11/15

Y1 - 2000/11/15

N2 - A 30Si epitaxial layer was grown by gas source molecular beam epitaxy (GS-MBE) using isotopically enriched 30SiH4. Its crystallinity and flatness were confirmed by reflection high-energy electron diffraction (RHEED). The concentrations of Si isotopes in the 30Si layer were measured with secondary ion mass spectrometry (SIMS). The isotope composition is 28Si:29Si:30Si = 0.05:0.07:99.88. No carbon or oxygen peaks were observed at the interface between the 30Si epitaxial layer and the substrate.

AB - A 30Si epitaxial layer was grown by gas source molecular beam epitaxy (GS-MBE) using isotopically enriched 30SiH4. Its crystallinity and flatness were confirmed by reflection high-energy electron diffraction (RHEED). The concentrations of Si isotopes in the 30Si layer were measured with secondary ion mass spectrometry (SIMS). The isotope composition is 28Si:29Si:30Si = 0.05:0.07:99.88. No carbon or oxygen peaks were observed at the interface between the 30Si epitaxial layer and the substrate.

UR - http://www.scopus.com/inward/record.url?scp=0034318201&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034318201&partnerID=8YFLogxK

U2 - 10.1143/jjap.39.l1133

DO - 10.1143/jjap.39.l1133

M3 - Article

AN - SCOPUS:0034318201

VL - 39

SP - L1133-L1134

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 11 B

ER -

Epitaxial growth of pure ³⁰Si layers on a natural Si(100) substrate using enriched ³⁰SiH₄

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this