Epitaxial growth of pure 30Si layers on a natural Si(100) substrate using enriched 30SiH4

Yukio Nakabayashi, Toru Segawa, Hirman I. Osman, Kazumasa Saito, Satoru Matsumoto, Junichi Murota, Kazumi Wada, Takao Abe

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9 Citations (Scopus)


A 30Si epitaxial layer was grown by gas source molecular beam epitaxy (GS-MBE) using isotopically enriched 30SiH4. Its crystallinity and flatness were confirmed by reflection high-energy electron diffraction (RHEED). The concentrations of Si isotopes in the 30Si layer were measured with secondary ion mass spectrometry (SIMS). The isotope composition is 28Si:29Si:30Si = 0.05:0.07:99.88. No carbon or oxygen peaks were observed at the interface between the 30Si epitaxial layer and the substrate.

Original languageEnglish
Pages (from-to)L1133-L1134
JournalJapanese journal of applied physics
Issue number11 B
Publication statusPublished - 2000 Nov 15

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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