Abstract
A 30Si epitaxial layer was grown by gas source molecular beam epitaxy (GS-MBE) using isotopically enriched 30SiH4. Its crystallinity and flatness were confirmed by reflection high-energy electron diffraction (RHEED). The concentrations of Si isotopes in the 30Si layer were measured with secondary ion mass spectrometry (SIMS). The isotope composition is 28Si:29Si:30Si = 0.05:0.07:99.88. No carbon or oxygen peaks were observed at the interface between the 30Si epitaxial layer and the substrate.
Original language | English |
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Pages (from-to) | L1133-L1134 |
Journal | Japanese journal of applied physics |
Volume | 39 |
Issue number | 11 B |
DOIs | |
Publication status | Published - 2000 Nov 15 |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)