Epitaxial growth of P atomic layer doped Si film by alternate surface reaction of PH3 and Si2H6 on strained Si 1-xGex/Si(100) in ultraclean low pressure CVD

Yohei Chiba; Masao Sakuraba; Junichi Murota

Epitaxial growth of P atomic layer doped Si film by alternate surface reaction of PH₃ and Si₂H₆ on strained Si _1-xGe_x/Si(100) in ultraclean low pressure CVD

Yohei Chiba, Masao Sakuraba, Junichi Murota

Information Devices Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest
Publication status	Published - 2006 Dec 1
Event	Third International SiGe Technology and Device Meeting, ISTDM 2006 - Princeton, NJ, United States Duration: 2006 May 15 → 2006 May 17

Publication series

Name	Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest
Volume	2006

Other

Other	Third International SiGe Technology and Device Meeting, ISTDM 2006
Country/Territory	United States
City	Princeton, NJ
Period	06/5/15 → 06/5/17

ASJC Scopus subject areas

Computer Science(all)
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

Cite this

Chiba, Y., Sakuraba, M., & Murota, J. (2006). Epitaxial growth of P atomic layer doped Si film by alternate surface reaction of PH₃ and Si₂H₆ on strained Si _1-xGe_x/Si(100) in ultraclean low pressure CVD. In Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest [1715983] (Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest; Vol. 2006).

Epitaxial growth of P atomic layer doped Si film by alternate surface reaction of PH₃ and Si₂H₆ on strained Si _1-xGe_x/Si(100) in ultraclean low pressure CVD. / Chiba, Yohei; Sakuraba, Masao; Murota, Junichi.

Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest. 2006. 1715983 (Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest; Vol. 2006).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chiba, Y, Sakuraba, M & Murota, J 2006, Epitaxial growth of P atomic layer doped Si film by alternate surface reaction of PH₃ and Si₂H₆ on strained Si _1-xGe_x/Si(100) in ultraclean low pressure CVD. in Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest., 1715983, Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest, vol. 2006, Third International SiGe Technology and Device Meeting, ISTDM 2006, Princeton, NJ, United States, 06/5/15.

Chiba Y, Sakuraba M, Murota J. Epitaxial growth of P atomic layer doped Si film by alternate surface reaction of PH₃ and Si₂H₆ on strained Si _1-xGe_x/Si(100) in ultraclean low pressure CVD. In Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest. 2006. 1715983. (Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest).

Chiba, Yohei ; Sakuraba, Masao ; Murota, Junichi. / Epitaxial growth of P atomic layer doped Si film by alternate surface reaction of PH₃ and Si₂H₆ on strained Si _1-xGe_x/Si(100) in ultraclean low pressure CVD. Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest. 2006. (Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest).

@inproceedings{fa1446eef9b44df18766dba2af61b925,

title = "Epitaxial growth of P atomic layer doped Si film by alternate surface reaction of PH3 and Si2H6 on strained Si 1-xGex/Si(100) in ultraclean low pressure CVD",

author = "Yohei Chiba and Masao Sakuraba and Junichi Murota",

year = "2006",

month = dec,

day = "1",

language = "English",

isbn = "1424404614",

series = "Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest",

booktitle = "Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest",

note = "Third International SiGe Technology and Device Meeting, ISTDM 2006 ; Conference date: 15-05-2006 Through 17-05-2006",

}

TY - GEN

T1 - Epitaxial growth of P atomic layer doped Si film by alternate surface reaction of PH3 and Si2H6 on strained Si 1-xGex/Si(100) in ultraclean low pressure CVD

AU - Chiba, Yohei

AU - Sakuraba, Masao

AU - Murota, Junichi

PY - 2006/12/1

Y1 - 2006/12/1

UR - http://www.scopus.com/inward/record.url?scp=34247532864&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34247532864&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:34247532864

SN - 1424404614

SN - 9781424404612

T3 - Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest

BT - Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest

T2 - Third International SiGe Technology and Device Meeting, ISTDM 2006

Y2 - 15 May 2006 through 17 May 2006