Epitaxial growth of P atomic layer doped Si film by alternate surface reaction of PH3 and Si2H6 on strained Si 1-xGex/Si(100) in ultraclean low pressure CVD

Yohei Chiba; Masao Sakuraba; Junichi Murota

Epitaxial growth of P atomic layer doped Si film by alternate surface reaction of PH₃ and Si₂H₆ on strained Si _1-xGe_x/Si(100) in ultraclean low pressure CVD

Yohei Chiba, Masao Sakuraba, Junichi Murota

Information Devices Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest
Publication status	Published - 2006 Dec 1
Event	Third International SiGe Technology and Device Meeting, ISTDM 2006 - Princeton, NJ, United States Duration: 2006 May 15 → 2006 May 17

Publication series

Name	Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest
Volume	2006

Other

Other	Third International SiGe Technology and Device Meeting, ISTDM 2006
Country	United States
City	Princeton, NJ
Period	06/5/15 → 06/5/17

ASJC Scopus subject areas

Computer Science(all)
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

Cite this

Chiba, Y., Sakuraba, M., & Murota, J. (2006). Epitaxial growth of P atomic layer doped Si film by alternate surface reaction of PH₃ and Si₂H₆ on strained Si _1-xGe_x/Si(100) in ultraclean low pressure CVD. In Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest [1715983] (Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest; Vol. 2006).

Epitaxial growth of P atomic layer doped Si film by alternate surface reaction of PH₃ and Si₂H₆ on strained Si _1-xGe_x/Si(100) in ultraclean low pressure CVD. / Chiba, Yohei; Sakuraba, Masao; Murota, Junichi.

Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest. 2006. 1715983 (Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest; Vol. 2006).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chiba, Y, Sakuraba, M & Murota, J 2006, Epitaxial growth of P atomic layer doped Si film by alternate surface reaction of PH₃ and Si₂H₆ on strained Si _1-xGe_x/Si(100) in ultraclean low pressure CVD. in Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest., 1715983, Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest, vol. 2006, Third International SiGe Technology and Device Meeting, ISTDM 2006, Princeton, NJ, United States, 06/5/15.

Chiba Y, Sakuraba M, Murota J. Epitaxial growth of P atomic layer doped Si film by alternate surface reaction of PH₃ and Si₂H₆ on strained Si _1-xGe_x/Si(100) in ultraclean low pressure CVD. In Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest. 2006. 1715983. (Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest).

Chiba, Yohei ; Sakuraba, Masao ; Murota, Junichi. / Epitaxial growth of P atomic layer doped Si film by alternate surface reaction of PH₃ and Si₂H₆ on strained Si _1-xGe_x/Si(100) in ultraclean low pressure CVD. Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest. 2006. (Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest).

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