@inproceedings{fa1446eef9b44df18766dba2af61b925,
title = "Epitaxial growth of P atomic layer doped Si film by alternate surface reaction of PH3 and Si2H6 on strained Si 1-xGex/Si(100) in ultraclean low pressure CVD",
author = "Yohei Chiba and Masao Sakuraba and Junichi Murota",
year = "2006",
month = dec,
day = "1",
language = "English",
isbn = "1424404614",
series = "Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest",
booktitle = "Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest",
note = "Third International SiGe Technology and Device Meeting, ISTDM 2006 ; Conference date: 15-05-2006 Through 17-05-2006",
}