Epitaxial growth of P atomic layer doped Si film by alternate surface reactions of PH3 and Si2H6 on strained Si 1-xGex/Si(1 0 0) in ultraclean low-pressure CVD

Yohei Chiba, Masao Sakuraba, Junichi Murota

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

P atomic layer formation on Si1-xGex(1 0 0) using PH3 and subsequent Si epitaxial growth by ultraclean low-pressure CVD using Si2H6 have been investigated. The quantity of P atoms on Si1-xGex(1 0 0) tends to increase and saturate with temperature, depending on Ge fraction in the range of 200-450 °C. By Si epitaxial growth on the P surface at 450 °C using Si2H 6 instead of SiH4, heavy P doping with the P concentration over 3 × 1021 cm-3 is achieved in an ultrathin region at the heterointerface with the thickness within 2 nm. For the P-doped samples, the Hall mobility of the electron is higher than that for uniformly P-doped Si with a lower P concentration of 1020 cm-3. From the mobility degradation after heat treatment up to 800 °C, it is expected that two-dimensional arrangement of P atoms is achieved for the as-deposited films.

Original languageEnglish
Article numberS28
Pages (from-to)S118-S122
JournalSemiconductor Science and Technology
Volume22
Issue number1
DOIs
Publication statusPublished - 2007 Jan 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Epitaxial growth of P atomic layer doped Si film by alternate surface reactions of PH<sub>3</sub> and Si<sub>2</sub>H<sub>6</sub> on strained Si <sub>1-x</sub>Ge<sub>x</sub>/Si(1 0 0) in ultraclean low-pressure CVD'. Together they form a unique fingerprint.

Cite this