Epitaxial growth of nonpolar ZnO and n-ZnO/i-ZnO/p-GaN heterostructure on Si(001) for ultraviolet light emitting diodes

Nam T. Nguyen, Sung Gi Ri, Takahiro Nagata, Keiji Ishibashi, Kenichiro Takahashi, Yoshifumi Tsunekawa, Setsu Suzuki, Toyohiro Chikyow

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12 Citations (Scopus)

Abstract

Nonpolar a-plane ZnO-film and n-ZnO/i-ZnO/p-GaN heterostructure LEDs were grown epitaxially by pulsed laser deposition and metal-organic chemical vapor deposition on Si(001) using AlN and MnS as buffer layers. X-ray diffraction pole figures showed an epitaxial relationship of ZnO(112̄0) ∥ AlN(112̄0) ∥ MnS(001) ∥ Si(001). A near band-edge emission from ZnO was observed at 378nm in photoluminescence measurements. Electroluminescence of nonpolar n-ZnO/i-ZnO/p-GaN LEDs displayed UV emission at 390nm under forward and reverse bias. Successful growth of nonpolar n-ZnO/i-ZnO/p-GaN heteroepitaxial on Si provides an attractive solution for integrating nonpolar ZnO-based optoelectronic devices with Si substrates for various applications.

Original languageEnglish
Article number062102
JournalApplied Physics Express
Volume7
Issue number6
DOIs
Publication statusPublished - 2014 Jun

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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