Epitaxial growth of (Na,K)NbO3 films by pulsed laser deposition

K. Sakurai, T. Hanawa, N. Kikuchi, K. Nishio, K. Tonooka, R. Wang, H. Bando, H. Takashima

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)


    (Na,K)NbO3 is a promising candidate for lead-free piezoelectric materials. (Na1-xKx)NbO3 films (x = 0.3-0.7) were epitaxially grown on a (100)SrTiO3 substrate via pulsed laser deposition. The effects of substrate temperature and oxygen pressure during deposition on the crystallinity of the films were examined: both parameters affected the mosaic spread of the crystallites and the formation of an impurity phase. In this study, the optimum conditions for the preparation of highly crystalline films were a substrate temperature of 800°C and oxygen pressure of ∼60 Pa. The lattice constants parallel and perpendicular to the substrate surface responded differently to changes in x: the constant parallel to the surface increased with increasing x, while the constant perpendicular to the surface was maximized at x = 0.5. The difference in the dependence of the lattice constants could be explained by the elastic distortion of the lattice.

    Original languageEnglish
    Title of host publicationOxide Semiconductors and Thin Films
    Number of pages6
    Publication statusPublished - 2013
    Event2012 MRS Fall Meeting - Boston, MA, United States
    Duration: 2012 Nov 252012 Nov 30

    Publication series

    NameMaterials Research Society Symposium Proceedings
    ISSN (Print)0272-9172


    Other2012 MRS Fall Meeting
    Country/TerritoryUnited States
    CityBoston, MA

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering


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