Epitaxial growth of (Na,K)NbO3 films by pulsed laser deposition

K. Sakurai, T. Hanawa, N. Kikuchi, K. Nishio, K. Tonooka, R. Wang, H. Bando, H. Takashima

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)

    Abstract

    (Na,K)NbO3 is a promising candidate for lead-free piezoelectric materials. (Na1-xKx)NbO3 films (x = 0.3-0.7) were epitaxially grown on a (100)SrTiO3 substrate via pulsed laser deposition. The effects of substrate temperature and oxygen pressure during deposition on the crystallinity of the films were examined: both parameters affected the mosaic spread of the crystallites and the formation of an impurity phase. In this study, the optimum conditions for the preparation of highly crystalline films were a substrate temperature of 800°C and oxygen pressure of ∼60 Pa. The lattice constants parallel and perpendicular to the substrate surface responded differently to changes in x: the constant parallel to the surface increased with increasing x, while the constant perpendicular to the surface was maximized at x = 0.5. The difference in the dependence of the lattice constants could be explained by the elastic distortion of the lattice.

    Original languageEnglish
    Title of host publicationOxide Semiconductors and Thin Films
    Pages227-232
    Number of pages6
    DOIs
    Publication statusPublished - 2013 Dec 10
    Event2012 MRS Fall Meeting - Boston, MA, United States
    Duration: 2012 Nov 252012 Nov 30

    Publication series

    NameMaterials Research Society Symposium Proceedings
    Volume1494
    ISSN (Print)0272-9172

    Other

    Other2012 MRS Fall Meeting
    CountryUnited States
    CityBoston, MA
    Period12/11/2512/11/30

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

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