Epitaxial growth of N delta doped Si films on Si(1 0 0) by alternately supplied NH 3 and SiH 4

Youngcheon Jeong, Masao Sakuraba, Junichi Murota

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14 Citations (Scopus)

Abstract

Atomic-layer doping of N in Si epitaxial growth by alternately supplied NH 3 and SiH 4 was investigated using an ultra-clean low-pressure chemical vapor deposition (LPCVD). Atomic layer order nitrided Si(1 0 0) with N amount of 3 × 10 14 cm -2 are formed by NH 3 exposure at 500 Pa and 400°C. By subsequent SiH 4 exposure at 25 Pa and 500°C, Si is epitaxially grown on the nitrided Si(1 0 0) with N amount of 3 × 10 14 cm -2 . High quality epitaxial growth of the multi-layer N-doped Si film composed of the N layers of 3 × 10 14 cm -2 and the 3.0 nm Si spacer is achieved. On the other hand, in case of 0.5 nm Si spacer, the crystallinity of N-doped Si film is degraded by the increase of N atoms with Si 3 N 4 structure after the second nitridation.

Original languageEnglish
Pages (from-to)197-201
Number of pages5
JournalApplied Surface Science
Volume224
Issue number1-4
DOIs
Publication statusPublished - 2004 Mar 15

Keywords

  • Atomic-layer doping
  • CVD
  • Epitaxial growth
  • Multi-layer N-doped Si
  • NH
  • SiH

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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