Epitaxial growth of iridium and platinum films on sapphire by metalorganic chemical vapor deposition

Roberto Vargas, Takashi Goto, Wei Zhang, Toshio Hirai

Research output: Contribution to journalArticlepeer-review

93 Citations (Scopus)

Abstract

Ir and Pt epitaxial films were grown on (0001), (112̄0), and (011̄2) sapphire by metalorganic chemical vapor deposition using Ir- or Pt-acetylacetonate precursors. The epitaxial growth was achieved at deposition temperatures between 500 and 600°C with the addition of oxygen to the source vapor. The film orientation and epitaxial relationships between films and substrates were determined by x-ray diffraction, x-ray pole figures, and reflection high energy electron diffraction. Ir films on (112̄0) sapphire grow in [100] orientation. Ir or Pt films on (011̄2) and (0001) sapphire grow in [111] orientation. Ir films on (0001) sapphire contain two in-plane orientations related by a 180°rotation, while Pt films containing only one in-plane orientation can be obtained on (011̄2) and (0001) sapphire.

Original languageEnglish
Pages (from-to)1094-1096
Number of pages3
JournalApplied Physics Letters
Volume65
Issue number9
DOIs
Publication statusPublished - 1994 Dec 1

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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