Abstract
Ir and Pt epitaxial films were grown on (0001), (112̄0), and (011̄2) sapphire by metalorganic chemical vapor deposition using Ir- or Pt-acetylacetonate precursors. The epitaxial growth was achieved at deposition temperatures between 500 and 600°C with the addition of oxygen to the source vapor. The film orientation and epitaxial relationships between films and substrates were determined by x-ray diffraction, x-ray pole figures, and reflection high energy electron diffraction. Ir films on (112̄0) sapphire grow in [100] orientation. Ir or Pt films on (011̄2) and (0001) sapphire grow in [111] orientation. Ir films on (0001) sapphire contain two in-plane orientations related by a 180°rotation, while Pt films containing only one in-plane orientation can be obtained on (011̄2) and (0001) sapphire.
Original language | English |
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Pages (from-to) | 1094-1096 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 65 |
Issue number | 9 |
DOIs | |
Publication status | Published - 1994 Dec 1 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)