Epitaxial growth of iridium and platinum films on sapphire by metalorganic chemical vapor deposition

Roberto Vargas; Takashi Goto; Wei Zhang; Toshio Hirai

doi:10.1063/1.112108

Epitaxial growth of iridium and platinum films on sapphire by metalorganic chemical vapor deposition

Roberto Vargas, Takashi Goto, Wei Zhang, Toshio Hirai

Materials Processing and Characterization Division

Research output: Contribution to journal › Article › peer-review

93 Citations (Scopus)

Abstract

Ir and Pt epitaxial films were grown on (0001), (112̄0), and (011̄2) sapphire by metalorganic chemical vapor deposition using Ir- or Pt-acetylacetonate precursors. The epitaxial growth was achieved at deposition temperatures between 500 and 600°C with the addition of oxygen to the source vapor. The film orientation and epitaxial relationships between films and substrates were determined by x-ray diffraction, x-ray pole figures, and reflection high energy electron diffraction. Ir films on (112̄0) sapphire grow in [100] orientation. Ir or Pt films on (011̄2) and (0001) sapphire grow in [111] orientation. Ir films on (0001) sapphire contain two in-plane orientations related by a 180°rotation, while Pt films containing only one in-plane orientation can be obtained on (011̄2) and (0001) sapphire.

Original language	English
Pages (from-to)	1094-1096
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	9
DOIs	https://doi.org/10.1063/1.112108
Publication status	Published - 1994 Dec 1

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Epitaxial growth of iridium and platinum films on sapphire by metalorganic chemical vapor deposition",

abstract = "Ir and Pt epitaxial films were grown on (0001), (11{\=2}0), and (01{\=1}2) sapphire by metalorganic chemical vapor deposition using Ir- or Pt-acetylacetonate precursors. The epitaxial growth was achieved at deposition temperatures between 500 and 600°C with the addition of oxygen to the source vapor. The film orientation and epitaxial relationships between films and substrates were determined by x-ray diffraction, x-ray pole figures, and reflection high energy electron diffraction. Ir films on (11{\=2}0) sapphire grow in [100] orientation. Ir or Pt films on (01{\=1}2) and (0001) sapphire grow in [111] orientation. Ir films on (0001) sapphire contain two in-plane orientations related by a 180°rotation, while Pt films containing only one in-plane orientation can be obtained on (01{\=1}2) and (0001) sapphire.",

author = "Roberto Vargas and Takashi Goto and Wei Zhang and Toshio Hirai",

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AU - Vargas, Roberto

AU - Goto, Takashi

AU - Zhang, Wei

AU - Hirai, Toshio

PY - 1994/12/1

Y1 - 1994/12/1

N2 - Ir and Pt epitaxial films were grown on (0001), (112̄0), and (011̄2) sapphire by metalorganic chemical vapor deposition using Ir- or Pt-acetylacetonate precursors. The epitaxial growth was achieved at deposition temperatures between 500 and 600°C with the addition of oxygen to the source vapor. The film orientation and epitaxial relationships between films and substrates were determined by x-ray diffraction, x-ray pole figures, and reflection high energy electron diffraction. Ir films on (112̄0) sapphire grow in [100] orientation. Ir or Pt films on (011̄2) and (0001) sapphire grow in [111] orientation. Ir films on (0001) sapphire contain two in-plane orientations related by a 180°rotation, while Pt films containing only one in-plane orientation can be obtained on (011̄2) and (0001) sapphire.

AB - Ir and Pt epitaxial films were grown on (0001), (112̄0), and (011̄2) sapphire by metalorganic chemical vapor deposition using Ir- or Pt-acetylacetonate precursors. The epitaxial growth was achieved at deposition temperatures between 500 and 600°C with the addition of oxygen to the source vapor. The film orientation and epitaxial relationships between films and substrates were determined by x-ray diffraction, x-ray pole figures, and reflection high energy electron diffraction. Ir films on (112̄0) sapphire grow in [100] orientation. Ir or Pt films on (011̄2) and (0001) sapphire grow in [111] orientation. Ir films on (0001) sapphire contain two in-plane orientations related by a 180°rotation, while Pt films containing only one in-plane orientation can be obtained on (011̄2) and (0001) sapphire.

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Epitaxial growth of iridium and platinum films on sapphire by metalorganic chemical vapor deposition

Abstract

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