Epitaxial growth of high dielectric constant lead-free relaxor ferroelectric for high-temperature operational film capacitor

Somu Kumaragurubaran, Takahiro Nagata, Yoshifumi Tsunekawa, Kenichiro Takahashi, Sung Gi Ri, Setsu Suzuki, Toyohiro Chikyow

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

An epitaxial thin-film capacitor based on relaxor ferroelectric oxide, BaTiO3-Bi(Mg2/3Nb1/3)O3 (BT-BMN), has been realized on Nb:SrTiO3 substrates. A high dielectric constant exceeding 400 was attained on high-temperature annealed films at frequencies below 100 kHz. BT-BMN thin-film exhibited a broad dielectric constant variation against temperature and also the frequency dependent dielectric-constant-maximum temperature. Excellent dielectric constant stability below 10% was achieved in 75-400°C temperature range with a low dielectric loss. This exemplifies BT-BMN as a dielectric for monolithically integrated capacitors that can function up to 400°C, breaking the present 175°C limit of bulky capacitors, in high-power high-temperature electronic devices.

Original languageEnglish
Pages (from-to)29-33
Number of pages5
JournalThin Solid Films
Volume592
DOIs
Publication statusPublished - 2015 Oct 1
Externally publishedYes

Keywords

  • High dielectric constant
  • High-temperature operational capacitor
  • Pulsed laser deposition
  • Relaxor ferroelectric

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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    Kumaragurubaran, S., Nagata, T., Tsunekawa, Y., Takahashi, K., Ri, S. G., Suzuki, S., & Chikyow, T. (2015). Epitaxial growth of high dielectric constant lead-free relaxor ferroelectric for high-temperature operational film capacitor. Thin Solid Films, 592, 29-33. https://doi.org/10.1016/j.tsf.2015.09.012