TY - JOUR
T1 - Epitaxial growth of high dielectric constant lead-free relaxor ferroelectric for high-temperature operational film capacitor
AU - Kumaragurubaran, Somu
AU - Nagata, Takahiro
AU - Tsunekawa, Yoshifumi
AU - Takahashi, Kenichiro
AU - Ri, Sung Gi
AU - Suzuki, Setsu
AU - Chikyow, Toyohiro
N1 - Funding Information:
Funding from Japan Science and Technology Agency (JST) — Adaptable & Seamless Technology Transfer Program through Target-driven R&D (A-STEP, No. AS2315002B ) and World Premier International Research Center Initiative Program of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan , is gratefully acknowledged.
Publisher Copyright:
© 2015 Elsevier B.V.
PY - 2015/10/1
Y1 - 2015/10/1
N2 - An epitaxial thin-film capacitor based on relaxor ferroelectric oxide, BaTiO3-Bi(Mg2/3Nb1/3)O3 (BT-BMN), has been realized on Nb:SrTiO3 substrates. A high dielectric constant exceeding 400 was attained on high-temperature annealed films at frequencies below 100 kHz. BT-BMN thin-film exhibited a broad dielectric constant variation against temperature and also the frequency dependent dielectric-constant-maximum temperature. Excellent dielectric constant stability below 10% was achieved in 75-400°C temperature range with a low dielectric loss. This exemplifies BT-BMN as a dielectric for monolithically integrated capacitors that can function up to 400°C, breaking the present 175°C limit of bulky capacitors, in high-power high-temperature electronic devices.
AB - An epitaxial thin-film capacitor based on relaxor ferroelectric oxide, BaTiO3-Bi(Mg2/3Nb1/3)O3 (BT-BMN), has been realized on Nb:SrTiO3 substrates. A high dielectric constant exceeding 400 was attained on high-temperature annealed films at frequencies below 100 kHz. BT-BMN thin-film exhibited a broad dielectric constant variation against temperature and also the frequency dependent dielectric-constant-maximum temperature. Excellent dielectric constant stability below 10% was achieved in 75-400°C temperature range with a low dielectric loss. This exemplifies BT-BMN as a dielectric for monolithically integrated capacitors that can function up to 400°C, breaking the present 175°C limit of bulky capacitors, in high-power high-temperature electronic devices.
KW - High dielectric constant
KW - High-temperature operational capacitor
KW - Pulsed laser deposition
KW - Relaxor ferroelectric
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U2 - 10.1016/j.tsf.2015.09.012
DO - 10.1016/j.tsf.2015.09.012
M3 - Article
AN - SCOPUS:84945415273
VL - 592
SP - 29
EP - 33
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
ER -