Epitaxial growth of high dielectric constant lead-free relaxor ferroelectric for high-temperature operational film capacitor

Somu Kumaragurubaran; Takahiro Nagata; Yoshifumi Tsunekawa; Kenichiro Takahashi; Sung Gi Ri; Setsu Suzuki; Toyohiro Chikyow

doi:10.1016/j.tsf.2015.09.012

Epitaxial growth of high dielectric constant lead-free relaxor ferroelectric for high-temperature operational film capacitor

Somu Kumaragurubaran, Takahiro Nagata, Yoshifumi Tsunekawa, Kenichiro Takahashi, Sung Gi Ri, Setsu Suzuki, Toyohiro Chikyow

Advanced Institute for Materials Research (AIMR)

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

An epitaxial thin-film capacitor based on relaxor ferroelectric oxide, BaTiO₃-Bi(Mg_2/3Nb_1/3)O₃ (BT-BMN), has been realized on Nb:SrTiO₃ substrates. A high dielectric constant exceeding 400 was attained on high-temperature annealed films at frequencies below 100 kHz. BT-BMN thin-film exhibited a broad dielectric constant variation against temperature and also the frequency dependent dielectric-constant-maximum temperature. Excellent dielectric constant stability below 10% was achieved in 75-400°C temperature range with a low dielectric loss. This exemplifies BT-BMN as a dielectric for monolithically integrated capacitors that can function up to 400°C, breaking the present 175°C limit of bulky capacitors, in high-power high-temperature electronic devices.

Original language	English
Pages (from-to)	29-33
Number of pages	5
Journal	Thin Solid Films
Volume	592
DOIs	https://doi.org/10.1016/j.tsf.2015.09.012
Publication status	Published - 2015 Oct 1

Keywords

High dielectric constant
High-temperature operational capacitor
Pulsed laser deposition
Relaxor ferroelectric

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2015.09.012

Fingerprint Dive into the research topics of 'Epitaxial growth of high dielectric constant lead-free relaxor ferroelectric for high-temperature operational film capacitor'. Together they form a unique fingerprint.

Cite this

Epitaxial growth of high dielectric constant lead-free relaxor ferroelectric for high-temperature operational film capacitor. / Kumaragurubaran, Somu; Nagata, Takahiro; Tsunekawa, Yoshifumi; Takahashi, Kenichiro; Ri, Sung Gi; Suzuki, Setsu; Chikyow, Toyohiro.

In: Thin Solid Films, Vol. 592, 01.10.2015, p. 29-33.

Research output: Contribution to journal › Article › peer-review

@article{f68bb93b797a433583f7772c9fc536f9,

title = "Epitaxial growth of high dielectric constant lead-free relaxor ferroelectric for high-temperature operational film capacitor",

abstract = "An epitaxial thin-film capacitor based on relaxor ferroelectric oxide, BaTiO3-Bi(Mg2/3Nb1/3)O3 (BT-BMN), has been realized on Nb:SrTiO3 substrates. A high dielectric constant exceeding 400 was attained on high-temperature annealed films at frequencies below 100 kHz. BT-BMN thin-film exhibited a broad dielectric constant variation against temperature and also the frequency dependent dielectric-constant-maximum temperature. Excellent dielectric constant stability below 10% was achieved in 75-400°C temperature range with a low dielectric loss. This exemplifies BT-BMN as a dielectric for monolithically integrated capacitors that can function up to 400°C, breaking the present 175°C limit of bulky capacitors, in high-power high-temperature electronic devices.",

keywords = "High dielectric constant, High-temperature operational capacitor, Pulsed laser deposition, Relaxor ferroelectric",

author = "Somu Kumaragurubaran and Takahiro Nagata and Yoshifumi Tsunekawa and Kenichiro Takahashi and Ri, {Sung Gi} and Setsu Suzuki and Toyohiro Chikyow",

note = "Funding Information: Funding from Japan Science and Technology Agency (JST) — Adaptable & Seamless Technology Transfer Program through Target-driven R&D (A-STEP, No. AS2315002B ) and World Premier International Research Center Initiative Program of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan , is gratefully acknowledged. ",

year = "2015",

month = oct,

day = "1",

doi = "10.1016/j.tsf.2015.09.012",

language = "English",

volume = "592",

pages = "29--33",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

}

TY - JOUR

T1 - Epitaxial growth of high dielectric constant lead-free relaxor ferroelectric for high-temperature operational film capacitor

AU - Kumaragurubaran, Somu

AU - Nagata, Takahiro

AU - Tsunekawa, Yoshifumi

AU - Takahashi, Kenichiro

AU - Ri, Sung Gi

AU - Suzuki, Setsu

AU - Chikyow, Toyohiro

N1 - Funding Information: Funding from Japan Science and Technology Agency (JST) — Adaptable & Seamless Technology Transfer Program through Target-driven R&D (A-STEP, No. AS2315002B ) and World Premier International Research Center Initiative Program of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan , is gratefully acknowledged.

PY - 2015/10/1

Y1 - 2015/10/1

N2 - An epitaxial thin-film capacitor based on relaxor ferroelectric oxide, BaTiO3-Bi(Mg2/3Nb1/3)O3 (BT-BMN), has been realized on Nb:SrTiO3 substrates. A high dielectric constant exceeding 400 was attained on high-temperature annealed films at frequencies below 100 kHz. BT-BMN thin-film exhibited a broad dielectric constant variation against temperature and also the frequency dependent dielectric-constant-maximum temperature. Excellent dielectric constant stability below 10% was achieved in 75-400°C temperature range with a low dielectric loss. This exemplifies BT-BMN as a dielectric for monolithically integrated capacitors that can function up to 400°C, breaking the present 175°C limit of bulky capacitors, in high-power high-temperature electronic devices.

AB - An epitaxial thin-film capacitor based on relaxor ferroelectric oxide, BaTiO3-Bi(Mg2/3Nb1/3)O3 (BT-BMN), has been realized on Nb:SrTiO3 substrates. A high dielectric constant exceeding 400 was attained on high-temperature annealed films at frequencies below 100 kHz. BT-BMN thin-film exhibited a broad dielectric constant variation against temperature and also the frequency dependent dielectric-constant-maximum temperature. Excellent dielectric constant stability below 10% was achieved in 75-400°C temperature range with a low dielectric loss. This exemplifies BT-BMN as a dielectric for monolithically integrated capacitors that can function up to 400°C, breaking the present 175°C limit of bulky capacitors, in high-power high-temperature electronic devices.

KW - High dielectric constant

KW - High-temperature operational capacitor

KW - Pulsed laser deposition

KW - Relaxor ferroelectric

UR - http://www.scopus.com/inward/record.url?scp=84945415273&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84945415273&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2015.09.012

DO - 10.1016/j.tsf.2015.09.012

M3 - Article

AN - SCOPUS:84945415273

VL - 592

SP - 29

EP - 33

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -