Epitaxial growth of high dielectric constant lead-free relaxor ferroelectric for high-temperature operational film capacitor

Somu Kumaragurubaran; Takahiro Nagata; Yoshifumi Tsunekawa; Kenichiro Takahashi; Sung Gi Ri; Setsu Suzuki; Toyohiro Chikyow

doi:10.1016/j.tsf.2015.09.012

Epitaxial growth of high dielectric constant lead-free relaxor ferroelectric for high-temperature operational film capacitor

Somu Kumaragurubaran, Takahiro Nagata, Yoshifumi Tsunekawa, Kenichiro Takahashi, Sung Gi Ri, Setsu Suzuki, Toyohiro Chikyow

Research output: Contribution to journal › Article

5 Citations (Scopus)

Abstract

An epitaxial thin-film capacitor based on relaxor ferroelectric oxide, BaTiO₃-Bi(Mg_2/3Nb_1/3)O₃ (BT-BMN), has been realized on Nb:SrTiO₃ substrates. A high dielectric constant exceeding 400 was attained on high-temperature annealed films at frequencies below 100 kHz. BT-BMN thin-film exhibited a broad dielectric constant variation against temperature and also the frequency dependent dielectric-constant-maximum temperature. Excellent dielectric constant stability below 10% was achieved in 75-400°C temperature range with a low dielectric loss. This exemplifies BT-BMN as a dielectric for monolithically integrated capacitors that can function up to 400°C, breaking the present 175°C limit of bulky capacitors, in high-power high-temperature electronic devices.

Original language	English
Pages (from-to)	29-33
Number of pages	5
Journal	Thin Solid Films
Volume	592
DOIs	https://doi.org/10.1016/j.tsf.2015.09.012
Publication status	Published - 2015 Oct 1
Externally published	Yes

Keywords

High dielectric constant
High-temperature operational capacitor
Pulsed laser deposition
Relaxor ferroelectric

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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Kumaragurubaran, S., Nagata, T., Tsunekawa, Y., Takahashi, K., Ri, S. G., Suzuki, S., & Chikyow, T. (2015). Epitaxial growth of high dielectric constant lead-free relaxor ferroelectric for high-temperature operational film capacitor. Thin Solid Films, 592, 29-33. https://doi.org/10.1016/j.tsf.2015.09.012

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title = "Epitaxial growth of high dielectric constant lead-free relaxor ferroelectric for high-temperature operational film capacitor",

abstract = "An epitaxial thin-film capacitor based on relaxor ferroelectric oxide, BaTiO3-Bi(Mg2/3Nb1/3)O3 (BT-BMN), has been realized on Nb:SrTiO3 substrates. A high dielectric constant exceeding 400 was attained on high-temperature annealed films at frequencies below 100 kHz. BT-BMN thin-film exhibited a broad dielectric constant variation against temperature and also the frequency dependent dielectric-constant-maximum temperature. Excellent dielectric constant stability below 10% was achieved in 75-400°C temperature range with a low dielectric loss. This exemplifies BT-BMN as a dielectric for monolithically integrated capacitors that can function up to 400°C, breaking the present 175°C limit of bulky capacitors, in high-power high-temperature electronic devices.",

keywords = "High dielectric constant, High-temperature operational capacitor, Pulsed laser deposition, Relaxor ferroelectric",

author = "Somu Kumaragurubaran and Takahiro Nagata and Yoshifumi Tsunekawa and Kenichiro Takahashi and Ri, {Sung Gi} and Setsu Suzuki and Toyohiro Chikyow",

year = "2015",

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T1 - Epitaxial growth of high dielectric constant lead-free relaxor ferroelectric for high-temperature operational film capacitor

AU - Kumaragurubaran, Somu

AU - Nagata, Takahiro

AU - Tsunekawa, Yoshifumi

AU - Takahashi, Kenichiro

AU - Ri, Sung Gi

AU - Suzuki, Setsu

AU - Chikyow, Toyohiro

PY - 2015/10/1

Y1 - 2015/10/1

N2 - An epitaxial thin-film capacitor based on relaxor ferroelectric oxide, BaTiO3-Bi(Mg2/3Nb1/3)O3 (BT-BMN), has been realized on Nb:SrTiO3 substrates. A high dielectric constant exceeding 400 was attained on high-temperature annealed films at frequencies below 100 kHz. BT-BMN thin-film exhibited a broad dielectric constant variation against temperature and also the frequency dependent dielectric-constant-maximum temperature. Excellent dielectric constant stability below 10% was achieved in 75-400°C temperature range with a low dielectric loss. This exemplifies BT-BMN as a dielectric for monolithically integrated capacitors that can function up to 400°C, breaking the present 175°C limit of bulky capacitors, in high-power high-temperature electronic devices.

AB - An epitaxial thin-film capacitor based on relaxor ferroelectric oxide, BaTiO3-Bi(Mg2/3Nb1/3)O3 (BT-BMN), has been realized on Nb:SrTiO3 substrates. A high dielectric constant exceeding 400 was attained on high-temperature annealed films at frequencies below 100 kHz. BT-BMN thin-film exhibited a broad dielectric constant variation against temperature and also the frequency dependent dielectric-constant-maximum temperature. Excellent dielectric constant stability below 10% was achieved in 75-400°C temperature range with a low dielectric loss. This exemplifies BT-BMN as a dielectric for monolithically integrated capacitors that can function up to 400°C, breaking the present 175°C limit of bulky capacitors, in high-power high-temperature electronic devices.

KW - High dielectric constant

KW - High-temperature operational capacitor

KW - Pulsed laser deposition

KW - Relaxor ferroelectric

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