Epitaxial growth of hexagonal GaN films on SiC/Si substrates by hot-mesh CVD method

Kazuki Takahashi, Kanji Yasui, Maki Suemitsu, Ariyuki Kato, Yuichiro Kuroki, Masasuke Takata, Tadashi Akahane

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Gallium nitride (GaN) films were grown on SiC/Si(111) substrates by hot-mesh chemical vapor deposition (CVD) using trimethylgallium (TMG) and ammonia (NH3). A SiC buffer layer was formed by carbonization on the Si(111) substrates using propane (C3H8). GaN epitaxial films were grown on the SiC layer by the reaction between NHx radicals generated on a tungsten hot-mesh surface and TMG molecules. From the X-ray diffraction pattern, the GaN epitaxial films grown by the two- or three-step growth technique at the substrate temperatures of 600°C and 800°C to 1000°C and the hot-mesh temperature of 1200°C showed good crystallinity. Photoluminescence spectra of GaN films grown by the three step growth technique showed a strong near-band-edge emission and a weak yellow luminescence.

Original languageEnglish
Title of host publicationAICAM 2005 - Proceedings of the Asian International Conference on Advanced Materials
PublisherTrans Tech Publications Ltd
Pages261-264
Number of pages4
ISBN (Print)0878499792, 9780878499793
DOIs
Publication statusPublished - 2006
EventAICAM 2005 - Asian International Conference on Advanced Materials - Beijing, China
Duration: 2005 Nov 32005 Nov 5

Publication series

NameAdvanced Materials Research
Volume11-12
ISSN (Print)1022-6680

Other

OtherAICAM 2005 - Asian International Conference on Advanced Materials
CountryChina
CityBeijing
Period05/11/305/11/5

Keywords

  • Hexagonal GaN
  • Hot-mesh CVD
  • Si substrates

ASJC Scopus subject areas

  • Engineering(all)

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    Takahashi, K., Yasui, K., Suemitsu, M., Kato, A., Kuroki, Y., Takata, M., & Akahane, T. (2006). Epitaxial growth of hexagonal GaN films on SiC/Si substrates by hot-mesh CVD method. In AICAM 2005 - Proceedings of the Asian International Conference on Advanced Materials (pp. 261-264). (Advanced Materials Research; Vol. 11-12). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/amr.11-12.261