Epitaxial growth of hexagonal GaN films on SiC/Si substrates by hot-mesh CVD method

Kazuki Takahashi; Kanji Yasui; Maki Suemitsu; Ariyuki Kato; Yuichiro Kuroki; Masasuke Takata; Tadashi Akahane

doi:10.4028/www.scientific.net/amr.11-12.261

Epitaxial growth of hexagonal GaN films on SiC/Si substrates by hot-mesh CVD method

Kazuki Takahashi, Kanji Yasui, Maki Suemitsu, Ariyuki Kato, Yuichiro Kuroki, Masasuke Takata, Tadashi Akahane

Information Devices Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

Gallium nitride (GaN) films were grown on SiC/Si(111) substrates by hot-mesh chemical vapor deposition (CVD) using trimethylgallium (TMG) and ammonia (NH₃). A SiC buffer layer was formed by carbonization on the Si(111) substrates using propane (C₃H₈). GaN epitaxial films were grown on the SiC layer by the reaction between NH_x radicals generated on a tungsten hot-mesh surface and TMG molecules. From the X-ray diffraction pattern, the GaN epitaxial films grown by the two- or three-step growth technique at the substrate temperatures of 600°C and 800°C to 1000°C and the hot-mesh temperature of 1200°C showed good crystallinity. Photoluminescence spectra of GaN films grown by the three step growth technique showed a strong near-band-edge emission and a weak yellow luminescence.

Original language	English
Title of host publication	AICAM 2005 - Proceedings of the Asian International Conference on Advanced Materials
Publisher	Trans Tech Publications Ltd
Pages	261-264
Number of pages	4
ISBN (Print)	0878499792, 9780878499793
DOIs	https://doi.org/10.4028/www.scientific.net/amr.11-12.261
Publication status	Published - 2006
Event	AICAM 2005 - Asian International Conference on Advanced Materials - Beijing, China Duration: 2005 Nov 3 → 2005 Nov 5

Publication series

Name	Advanced Materials Research
Volume	11-12
ISSN (Print)	1022-6680

Other

Other	AICAM 2005 - Asian International Conference on Advanced Materials
Country	China
City	Beijing
Period	05/11/3 → 05/11/5

Keywords

Hexagonal GaN
Hot-mesh CVD
Si substrates

ASJC Scopus subject areas

Engineering(all)

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Takahashi, K., Yasui, K., Suemitsu, M., Kato, A., Kuroki, Y., Takata, M., & Akahane, T. (2006). Epitaxial growth of hexagonal GaN films on SiC/Si substrates by hot-mesh CVD method. In AICAM 2005 - Proceedings of the Asian International Conference on Advanced Materials (pp. 261-264). (Advanced Materials Research; Vol. 11-12). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/amr.11-12.261

Epitaxial growth of hexagonal GaN films on SiC/Si substrates by hot-mesh CVD method. / Takahashi, Kazuki; Yasui, Kanji; Suemitsu, Maki; Kato, Ariyuki; Kuroki, Yuichiro; Takata, Masasuke; Akahane, Tadashi.

AICAM 2005 - Proceedings of the Asian International Conference on Advanced Materials. Trans Tech Publications Ltd, 2006. p. 261-264 (Advanced Materials Research; Vol. 11-12).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Takahashi, K, Yasui, K, Suemitsu, M, Kato, A, Kuroki, Y, Takata, M & Akahane, T 2006, Epitaxial growth of hexagonal GaN films on SiC/Si substrates by hot-mesh CVD method. in AICAM 2005 - Proceedings of the Asian International Conference on Advanced Materials. Advanced Materials Research, vol. 11-12, Trans Tech Publications Ltd, pp. 261-264, AICAM 2005 - Asian International Conference on Advanced Materials, Beijing, China, 05/11/3. https://doi.org/10.4028/www.scientific.net/amr.11-12.261

Takahashi K, Yasui K, Suemitsu M, Kato A, Kuroki Y, Takata M et al. Epitaxial growth of hexagonal GaN films on SiC/Si substrates by hot-mesh CVD method. In AICAM 2005 - Proceedings of the Asian International Conference on Advanced Materials. Trans Tech Publications Ltd. 2006. p. 261-264. (Advanced Materials Research). https://doi.org/10.4028/www.scientific.net/amr.11-12.261

Takahashi, Kazuki ; Yasui, Kanji ; Suemitsu, Maki ; Kato, Ariyuki ; Kuroki, Yuichiro ; Takata, Masasuke ; Akahane, Tadashi. / Epitaxial growth of hexagonal GaN films on SiC/Si substrates by hot-mesh CVD method. AICAM 2005 - Proceedings of the Asian International Conference on Advanced Materials. Trans Tech Publications Ltd, 2006. pp. 261-264 (Advanced Materials Research).

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abstract = "Gallium nitride (GaN) films were grown on SiC/Si(111) substrates by hot-mesh chemical vapor deposition (CVD) using trimethylgallium (TMG) and ammonia (NH3). A SiC buffer layer was formed by carbonization on the Si(111) substrates using propane (C3H8). GaN epitaxial films were grown on the SiC layer by the reaction between NHx radicals generated on a tungsten hot-mesh surface and TMG molecules. From the X-ray diffraction pattern, the GaN epitaxial films grown by the two- or three-step growth technique at the substrate temperatures of 600°C and 800°C to 1000°C and the hot-mesh temperature of 1200°C showed good crystallinity. Photoluminescence spectra of GaN films grown by the three step growth technique showed a strong near-band-edge emission and a weak yellow luminescence.",

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author = "Kazuki Takahashi and Kanji Yasui and Maki Suemitsu and Ariyuki Kato and Yuichiro Kuroki and Masasuke Takata and Tadashi Akahane",

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AU - Takahashi, Kazuki

AU - Yasui, Kanji

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AU - Kato, Ariyuki

AU - Kuroki, Yuichiro

AU - Takata, Masasuke

AU - Akahane, Tadashi

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N2 - Gallium nitride (GaN) films were grown on SiC/Si(111) substrates by hot-mesh chemical vapor deposition (CVD) using trimethylgallium (TMG) and ammonia (NH3). A SiC buffer layer was formed by carbonization on the Si(111) substrates using propane (C3H8). GaN epitaxial films were grown on the SiC layer by the reaction between NHx radicals generated on a tungsten hot-mesh surface and TMG molecules. From the X-ray diffraction pattern, the GaN epitaxial films grown by the two- or three-step growth technique at the substrate temperatures of 600°C and 800°C to 1000°C and the hot-mesh temperature of 1200°C showed good crystallinity. Photoluminescence spectra of GaN films grown by the three step growth technique showed a strong near-band-edge emission and a weak yellow luminescence.

AB - Gallium nitride (GaN) films were grown on SiC/Si(111) substrates by hot-mesh chemical vapor deposition (CVD) using trimethylgallium (TMG) and ammonia (NH3). A SiC buffer layer was formed by carbonization on the Si(111) substrates using propane (C3H8). GaN epitaxial films were grown on the SiC layer by the reaction between NHx radicals generated on a tungsten hot-mesh surface and TMG molecules. From the X-ray diffraction pattern, the GaN epitaxial films grown by the two- or three-step growth technique at the substrate temperatures of 600°C and 800°C to 1000°C and the hot-mesh temperature of 1200°C showed good crystallinity. Photoluminescence spectra of GaN films grown by the three step growth technique showed a strong near-band-edge emission and a weak yellow luminescence.

KW - Hexagonal GaN

KW - Hot-mesh CVD

KW - Si substrates

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