Epitaxial growth of heavily P-doped Si films at 450°C by alternately supplied PH3 and SiH4

Y. Shimamune, M. Sakuraba, T. Matsuura, Junichi Murota

Research output: Contribution to journalConference article

5 Citations (Scopus)

Abstract

Epitaxial growth of heavily P-doped Si films at 450°C by alternately supplied PH3 and SiH4 has been investigated using an ultraclean low-pressure chemical vapor deposition (CVD) system. By exposing the Si(100) surface to PH3 at a partial pressure of 0.26Pa at 450-750°C, two or three atomic-layers of P are adsorbed. Thermal desorption of P occurs at 650°C and only slightly at 450°C. By alternately supplied PH3 at 300-450°C and SiH4 at 450°C, opitaxial growth of heavily P-doped Si films of average P concentrations of ∼1021cm-3 are achieved. In the ease of 4 cycles of alternately supplied PH3 and SiH4 at 450°C, 26nm-thick P-doped epitaxial Si film, with the average P concentration of 6×102°cm-3, is formed. It is found that about 60% of P is electrically active even in the heavily P-doped epitaxial Si film and the resistivity is as low as ∼3×10 -4Ωcm. By annealing the film at 550°C and above, it is found that the carder concentration decreases and the resistivity increases. It is suggested that very low-resistive epitaxial Si film is formed by alternately supplied PH3 and SiH4 only at a very low-temperature such as 450°C.

Original languageEnglish
JournalJournal De Physique. IV : JP
Volume11
Issue number3
Publication statusPublished - 2001 Jan 1
Event13th European Conference on Chemical Vapor Deposition (EUROCVD 13) - Athens, Greece
Duration: 2001 Aug 262001 Aug 31

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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