Abstract
By using low-energy electron-cyclotron-resonance (ECR) Ar plasma chemical vapor deposition (CVD), heavily B-doped Si and Ge films can be grown epitaxially on Si(100) even without substrate heating. It was also clarified that high carrier concentration above 1018 cm-3 in Si can be obtained by low-temperature heat treatment at as low as 200-300°C. In the case of B-doped Ge on Si(100), by introducing an 1 nm-thick undoped epitaxial Ge buffer layer, crystallinity and electrical resistivity can be improved.
Original language | English |
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Pages (from-to) | 223-228 |
Number of pages | 6 |
Journal | ECS Transactions |
Volume | 58 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2013 |
ASJC Scopus subject areas
- Engineering(all)