Epitaxial growth of heavily B-doped Si and Ge films on Si(100) by low-energy ECR Ar plasma CVD without substrate heating

Yusuke Abe; Shuji Kubota; Masao Sakuraba; Junichi Murota; Shigeo Sato

doi:10.1149/05809.0223ecst

Epitaxial growth of heavily B-doped Si and Ge films on Si(100) by low-energy ECR Ar plasma CVD without substrate heating

Yusuke Abe, Shuji Kubota, Masao Sakuraba, Junichi Murota, Shigeo Sato

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Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

By using low-energy electron-cyclotron-resonance (ECR) Ar plasma chemical vapor deposition (CVD), heavily B-doped Si and Ge films can be grown epitaxially on Si(100) even without substrate heating. It was also clarified that high carrier concentration above 10¹⁸ cm^-3 in Si can be obtained by low-temperature heat treatment at as low as 200-300°C. In the case of B-doped Ge on Si(100), by introducing an 1 nm-thick undoped epitaxial Ge buffer layer, crystallinity and electrical resistivity can be improved.

Original language	English
Pages (from-to)	223-228
Number of pages	6
Journal	ECS Transactions
Volume	58
Issue number	9
DOIs	https://doi.org/10.1149/05809.0223ecst
Publication status	Published - 2013

ASJC Scopus subject areas

Engineering(all)

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abstract = "By using low-energy electron-cyclotron-resonance (ECR) Ar plasma chemical vapor deposition (CVD), heavily B-doped Si and Ge films can be grown epitaxially on Si(100) even without substrate heating. It was also clarified that high carrier concentration above 1018 cm-3 in Si can be obtained by low-temperature heat treatment at as low as 200-300°C. In the case of B-doped Ge on Si(100), by introducing an 1 nm-thick undoped epitaxial Ge buffer layer, crystallinity and electrical resistivity can be improved.",

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T1 - Epitaxial growth of heavily B-doped Si and Ge films on Si(100) by low-energy ECR Ar plasma CVD without substrate heating

AU - Abe, Yusuke

AU - Kubota, Shuji

AU - Sakuraba, Masao

AU - Murota, Junichi

AU - Sato, Shigeo

PY - 2013

Y1 - 2013

N2 - By using low-energy electron-cyclotron-resonance (ECR) Ar plasma chemical vapor deposition (CVD), heavily B-doped Si and Ge films can be grown epitaxially on Si(100) even without substrate heating. It was also clarified that high carrier concentration above 1018 cm-3 in Si can be obtained by low-temperature heat treatment at as low as 200-300°C. In the case of B-doped Ge on Si(100), by introducing an 1 nm-thick undoped epitaxial Ge buffer layer, crystallinity and electrical resistivity can be improved.

AB - By using low-energy electron-cyclotron-resonance (ECR) Ar plasma chemical vapor deposition (CVD), heavily B-doped Si and Ge films can be grown epitaxially on Si(100) even without substrate heating. It was also clarified that high carrier concentration above 1018 cm-3 in Si can be obtained by low-temperature heat treatment at as low as 200-300°C. In the case of B-doped Ge on Si(100), by introducing an 1 nm-thick undoped epitaxial Ge buffer layer, crystallinity and electrical resistivity can be improved.

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Epitaxial growth of heavily B-doped Si and Ge films on Si(100) by low-energy ECR Ar plasma CVD without substrate heating

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