Epitaxial growth of GaN layers on metallic TiN buffer layers

Yu Uchida, Kazuhiro Ito, Susumu Tsukimoto, Yuhei Ikemoto, Koji Hirata, Naoki Shibata, Masanori Murakami

    Research output: Contribution to journalArticlepeer-review

    12 Citations (Scopus)


    To improve GaN light-emitting diode light emission, we produced metal organic chemical vapor deposition (MOCVD)-grown, continuous, flat GaN layers on metallic TiN buffer layers deposited on sapphire substrates. Three important conditions were found: (a) the sapphire substrate surface plane should be (1120), (b) the TiN layer surface plane should be (111), and (c) the TiN buffer layer nitrogen content should be higher than that of stoichiometric TiN. Reduction of TiN layer thickness reduced TiN buffer layer surface roughness. Threading dislocation density in GaN layers grown on TiN buffer layers was much lower than that in GaN layers grown on AlN.

    Original languageEnglish
    Pages (from-to)1806-1811
    Number of pages6
    JournalJournal of Electronic Materials
    Issue number10
    Publication statusPublished - 2006 Oct


    • Epitaxial growth of GaN
    • Film thickness
    • Nitrogen content
    • TiN buffer layers

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

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