Epitaxial growth of GaN layers on metallic TiN buffer layers

Yu Uchida; Kazuhiro Ito; Susumu Tsukimoto; Yuhei Ikemoto; Koji Hirata; Naoki Shibata; Masanori Murakami

doi:10.1007/s11664-006-0161-6

Epitaxial growth of GaN layers on metallic TiN buffer layers

Yu Uchida, Kazuhiro Ito, Susumu Tsukimoto, Yuhei Ikemoto, Koji Hirata, Naoki Shibata, Masanori Murakami

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

To improve GaN light-emitting diode light emission, we produced metal organic chemical vapor deposition (MOCVD)-grown, continuous, flat GaN layers on metallic TiN buffer layers deposited on sapphire substrates. Three important conditions were found: (a) the sapphire substrate surface plane should be (1120), (b) the TiN layer surface plane should be (111), and (c) the TiN buffer layer nitrogen content should be higher than that of stoichiometric TiN. Reduction of TiN layer thickness reduced TiN buffer layer surface roughness. Threading dislocation density in GaN layers grown on TiN buffer layers was much lower than that in GaN layers grown on AlN.

Original language	English
Pages (from-to)	1806-1811
Number of pages	6
Journal	Journal of Electronic Materials
Volume	35
Issue number	10
DOIs	https://doi.org/10.1007/s11664-006-0161-6
Publication status	Published - 2006 Oct
Externally published	Yes

Keywords

Epitaxial growth of GaN
Film thickness
Nitrogen content
TiN buffer layers

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-006-0161-6

Cite this

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title = "Epitaxial growth of GaN layers on metallic TiN buffer layers",

abstract = "To improve GaN light-emitting diode light emission, we produced metal organic chemical vapor deposition (MOCVD)-grown, continuous, flat GaN layers on metallic TiN buffer layers deposited on sapphire substrates. Three important conditions were found: (a) the sapphire substrate surface plane should be (1120), (b) the TiN layer surface plane should be (111), and (c) the TiN buffer layer nitrogen content should be higher than that of stoichiometric TiN. Reduction of TiN layer thickness reduced TiN buffer layer surface roughness. Threading dislocation density in GaN layers grown on TiN buffer layers was much lower than that in GaN layers grown on AlN.",

keywords = "Epitaxial growth of GaN, Film thickness, Nitrogen content, TiN buffer layers",

author = "Yu Uchida and Kazuhiro Ito and Susumu Tsukimoto and Yuhei Ikemoto and Koji Hirata and Naoki Shibata and Masanori Murakami",

note = "Funding Information: This work was supported by Grants-in-Aid for Scientific Research from The Ministry of Education, Culture, Sports, Science and Technology (Nos. 15206069 and 17760568).",

year = "2006",

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doi = "10.1007/s11664-006-0161-6",

language = "English",

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T1 - Epitaxial growth of GaN layers on metallic TiN buffer layers

AU - Uchida, Yu

AU - Ito, Kazuhiro

AU - Tsukimoto, Susumu

AU - Ikemoto, Yuhei

AU - Hirata, Koji

AU - Shibata, Naoki

AU - Murakami, Masanori

N1 - Funding Information: This work was supported by Grants-in-Aid for Scientific Research from The Ministry of Education, Culture, Sports, Science and Technology (Nos. 15206069 and 17760568).

PY - 2006/10

Y1 - 2006/10

N2 - To improve GaN light-emitting diode light emission, we produced metal organic chemical vapor deposition (MOCVD)-grown, continuous, flat GaN layers on metallic TiN buffer layers deposited on sapphire substrates. Three important conditions were found: (a) the sapphire substrate surface plane should be (1120), (b) the TiN layer surface plane should be (111), and (c) the TiN buffer layer nitrogen content should be higher than that of stoichiometric TiN. Reduction of TiN layer thickness reduced TiN buffer layer surface roughness. Threading dislocation density in GaN layers grown on TiN buffer layers was much lower than that in GaN layers grown on AlN.

AB - To improve GaN light-emitting diode light emission, we produced metal organic chemical vapor deposition (MOCVD)-grown, continuous, flat GaN layers on metallic TiN buffer layers deposited on sapphire substrates. Three important conditions were found: (a) the sapphire substrate surface plane should be (1120), (b) the TiN layer surface plane should be (111), and (c) the TiN buffer layer nitrogen content should be higher than that of stoichiometric TiN. Reduction of TiN layer thickness reduced TiN buffer layer surface roughness. Threading dislocation density in GaN layers grown on TiN buffer layers was much lower than that in GaN layers grown on AlN.

KW - Epitaxial growth of GaN

KW - Film thickness

KW - Nitrogen content

KW - TiN buffer layers

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JF - Journal of Electronic Materials

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ER -

Epitaxial growth of GaN layers on metallic TiN buffer layers

Abstract

Keywords

ASJC Scopus subject areas

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