Epitaxial growth of GaN films by pulse-mode hot-mesh chemical vapor deposition

Yasuaki Komae, Kanji Yasui, Maki Suemitsu, Tetsuo Endoh, Takashi Itoh, Hideki Nakazawa, Yuzuru Narita, Masasuke Takata, Tadashi Akahane

Research output: Contribution to journalArticle

Abstract

Intermittent gas supplies for hot-mesh chemical vapor deposition (CVD) for the epitaxial growth of gallium nitride (GaN) films were investigated to improve film crystallinity and optical properties. The GaN films were deposited on SiC/Si(111) substrates using an alternating-source gas supply or an intermittent supply of source gases such as ammonia (NH3) and trimethylgallium (TMG) in hot-mesh CVD after deposition of an aluminum nitride (AlN) buffer layer. The AlN layer was deposited using NH3 and trimethylaluminum (TMA) on a SiC layer grown by carbonization of a Si substrate using propane (C3H8). GaN films were grown on the AlN layer by a reaction between NHx radicals generated on a ruthenium (Ru)-coated tungsten (W) mesh and TMG molecules. After testing various gas supply modes, GaN films with good crystallinity and surface morphology were obtained using an intermittent supply of TMG and a continuous supply of NH3 gas. An optimal interval for the TMG gas supply was also obtained for the apparatus employed.

Original languageEnglish
Article number076509
JournalJapanese journal of applied physics
Volume48
Issue number7 PART 1
DOIs
Publication statusPublished - 2009 Jul 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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    Komae, Y., Yasui, K., Suemitsu, M., Endoh, T., Itoh, T., Nakazawa, H., Narita, Y., Takata, M., & Akahane, T. (2009). Epitaxial growth of GaN films by pulse-mode hot-mesh chemical vapor deposition. Japanese journal of applied physics, 48(7 PART 1), [076509]. https://doi.org/10.1143/JJAP.48.076509