TY - JOUR
T1 - Epitaxial growth of GaN film on (La,Sr)(Al,Ta)O3 (111) substrate by metalorganic chemical vapor deposition
AU - Sumiya, Masatomo
AU - Chikyow, Toyohiro
AU - Sasahara, Takayuki
AU - Yoshimura, Katsuhiko
AU - Ohta, Jitsuo
AU - Fujioka, Hiroshi
AU - Tagaya, Sumiyoshi
AU - Ikeya, Hirofumi
AU - Koinuma, Hideomi
AU - Fuke, Shunro
N1 - Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2002/8
Y1 - 2002/8
N2 - GaN films were grown on (La0.29,Sr0.71)(Al0.65,Ta0.35)O 3 (LSAT) (111) substrates, the lattice constant of which matched the 3 × 3 structure of GaN (0001) and the thermal expansion coefficient of which was close to that of GaN, by atmospheric metalorganic chemical vapor deposition. It was found that the surface of LSAT having a perovskite crystal structure was damaged in ambient of NH3 and TMG gas. However, the epitaxial growth of GaN film on the LSAT substrate was achieved by using an AlN blocking layer to prevent the damage by these gases. The crystallographic orientation was evaluated from a phi-scan of 4-cycle X-ray diffraction to be GaN[11̄00] ∥ LSAT[1 1̄0] rotating in plane by 30° against the expected orientation (GaN[21̄1̄0] ∥ LSAT[11̄0]). The 30° rotation would be caused by the bond configuration of the surface of the LSAT substrate. The interface structure at the substrate and the threading dislocation in the films were also investigated using a cross-sectional transmission electron microscope.
AB - GaN films were grown on (La0.29,Sr0.71)(Al0.65,Ta0.35)O 3 (LSAT) (111) substrates, the lattice constant of which matched the 3 × 3 structure of GaN (0001) and the thermal expansion coefficient of which was close to that of GaN, by atmospheric metalorganic chemical vapor deposition. It was found that the surface of LSAT having a perovskite crystal structure was damaged in ambient of NH3 and TMG gas. However, the epitaxial growth of GaN film on the LSAT substrate was achieved by using an AlN blocking layer to prevent the damage by these gases. The crystallographic orientation was evaluated from a phi-scan of 4-cycle X-ray diffraction to be GaN[11̄00] ∥ LSAT[1 1̄0] rotating in plane by 30° against the expected orientation (GaN[21̄1̄0] ∥ LSAT[11̄0]). The 30° rotation would be caused by the bond configuration of the surface of the LSAT substrate. The interface structure at the substrate and the threading dislocation in the films were also investigated using a cross-sectional transmission electron microscope.
KW - (La,Sr)(Al,Ta)O (LSAT) (111) substrate
KW - AlN blocking layer
KW - Crystallographic orientation
KW - GaN
KW - Metalorganic chemical vapor deposition
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U2 - 10.1143/jjap.41.5038
DO - 10.1143/jjap.41.5038
M3 - Article
AN - SCOPUS:0036697490
VL - 41
SP - 5038
EP - 5041
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 8
ER -