Epitaxial growth of FeSe0.5Te0.5 thin films on CaF2 substrates with high critical current density

Ichiro Tsukada, Masafumi Hanawa, Takanori Akiike, Fuyuki Nabeshima, Yoshinori Imai, Ataru Ichinose, Seiki Komiya, Tatsuo Hikage, Takahiko Kawaguchi, Hiroshi Ikuta, Atsutaka Maeda

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63 Citations (Scopus)


In-situ epitaxial growth of FeSe0.5Te0.5 thin films is demonstrated on a nonoxide substrate CaF2. Structural analysis reveals that compressive stress is moderately added to 36-nm-thick FeSe 0.5Te0.5, which pushes up the critical temperature to above 15K, showing higher values than that of bulk crystals. The critical current density at T = 4.5 K reaches 5.9 × 104 A cm -2 at μ0H= 10T, and 4.2 × 104Acm -2 at μ0H = 14T. These results indicate that fluoride substrates have high potential for the growth of iron-based superconductors in comparison with popular oxide substrates.

Original languageEnglish
JournalApplied Physics Express
Issue number5
Publication statusPublished - 2011 May
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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