Epitaxial growth of Er3+-doped CaF2 by molecular beam epitaxy

K. Adachi, T. Yao, Tetsuo Taniuchi, A. Kasuya, R. H. Miles, Satoshi Uda, T. Fukuda

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

Monocrystalline Er3+-doped CaF2 layers are grown on CaF2 substrates by molecular beam epitaxy (MBE) with Er3+ concentration up to 31.2 wt%. The lattice parameter and the crystallinity of the epilayers are investigated by X-ray diffraction analysis, electron probe microanalysis, and scanning electron microscopy. Green light emission at 538 nm is generated by upconversion for the first time, using a 798 nm laser diode pump. Maximum emission intensity at this wavelength is obtained at an Er3+ concentration of 13.3 wt%.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume35
Issue number4 A
Publication statusPublished - 1996 Apr 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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