Epitaxial growth of C60 thin films using continuous-wave laser molecular beam epitaxy

Seiichiro Yaginuma, Kenji Itaka, Masamitsu Haemori, Masao Katayama, Yuji Matsumoto, Hideomi Koinuma

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have fabricated C60 thin films on various substrates (mica, MoS2, HOPG, LiF, NaCl, KBr, KCl and CaF2) by using continuous-wave laser molecular beam epitaxy (CWL-MBE), which is very suitable technique to grow epitaxial organic thin films because of good controllability of evaporation as compared with Knudsen-cell method. The films were evaluated by reflection high-energy electron diffraction with micro channel imaging plate (MCP-RHEED) and atomic force microscopy (AFM). AFM images of the C60 films on mica, MoS2 and HOPG substrates show flat and homogeneous, morphology, and epitaxial growth of the films on mica and MoS2 substrates were observed by RHEED. This result shows mica, MoS2, HOPG substrates are good candidates for epitaxial growth of C60 thin films.

Original languageEnglish
Title of host publicationOrganic Electronics
Subtitle of host publicationMaterials, Devices and Applications
Pages223-227
Number of pages5
Publication statusPublished - 2006 Dec 1
Externally publishedYes
Event2006 MRS Fall Meeting - Boston, MA, United States
Duration: 2006 Nov 272006 Nov 29

Publication series

NameMaterials Research Society Symposium Proceedings
Volume965
ISSN (Print)0272-9172

Other

Other2006 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period06/11/2706/11/29

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Yaginuma, S., Itaka, K., Haemori, M., Katayama, M., Matsumoto, Y., & Koinuma, H. (2006). Epitaxial growth of C60 thin films using continuous-wave laser molecular beam epitaxy. In Organic Electronics: Materials, Devices and Applications (pp. 223-227). (Materials Research Society Symposium Proceedings; Vol. 965).