Epitaxial growth of C60 thin films on the Bi(0001)/Si(111) surface

A. I. Oreshkin, R. Z. Bakhtizin, J. T. Sadowski, T. Sakurai

    Research output: Contribution to journalArticlepeer-review

    1 Citation (Scopus)


    The morphology and atomic structure of C60 fullerene films on the Bi(0001)/Si(111)-7 × 7 surface with different coverages have been studied by scanning tunneling microscopy and spectroscopy and low-energy electron microscopy in high vacuum. It is shown that the most favorable sites for nucleation of C60 islands are double steps and domain boundaries on the surface of epitaxial Bi film.

    Original languageEnglish
    Pages (from-to)883-885
    Number of pages3
    JournalBulletin of the Russian Academy of Sciences: Physics
    Issue number7
    Publication statusPublished - 2009

    ASJC Scopus subject areas

    • Physics and Astronomy(all)


    Dive into the research topics of 'Epitaxial growth of C60 thin films on the Bi(0001)/Si(111) surface'. Together they form a unique fingerprint.

    Cite this