Epitaxial growth of Co2 MnSi thin films at the vicinal surface of n-Ge(111) substrate

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Abstract

The structure and magnetic properties of Co2 MnSi films on n-Ge(111) substrate were investigated for the motivation of spin injection. The 50-nm-thick Co2 MnSi films were fabricated on n-Ge(111) substrates by dc sputtering and postannealed about 1 h at the various temperatures ranging from 200-500 °C. In the annealing temperature range of 300-400 °C, the Co2 MnSi were grown epitaxially at the vicinal surface of n-Ge(111) substrates. The epitaxial layer of Co2 MnSi films was about 18 nm thick at 350 °C and exhibited ferromagnetic behavior. Interestingly, there was no diffusion of Ge inside the epitaxial layer and atomically flat interface was obtained.

Original languageEnglish
Article number142501
JournalApplied Physics Letters
Volume96
Issue number14
DOIs
Publication statusPublished - 2010 Apr 27

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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