Epitaxial growth of bismuth oxyhalide thin films using mist CVD at atmospheric pressure

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Abstract

We report the epitaxial growth of bismuth oxyhalide BiOX (X = Cl, Br, and I) thin films using mist chemical vapour deposition at atmospheric pressure. The thin films grown under optimum conditions possessed atomically flat surfaces and high crystallinity, where the lattice constants of BiOX were controlled by epitaxial strain.

Original languageEnglish
Pages (from-to)9481-9484
Number of pages4
JournalChemical Communications
Volume56
Issue number66
DOIs
Publication statusPublished - 2020 Aug 25

ASJC Scopus subject areas

  • Catalysis
  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Chemistry(all)
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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