Abstract
We report the epitaxial growth of bismuth oxyhalide BiOX (X = Cl, Br, and I) thin films using mist chemical vapour deposition at atmospheric pressure. The thin films grown under optimum conditions possessed atomically flat surfaces and high crystallinity, where the lattice constants of BiOX were controlled by epitaxial strain.
| Original language | English |
|---|---|
| Pages (from-to) | 9481-9484 |
| Number of pages | 4 |
| Journal | Chemical Communications |
| Volume | 56 |
| Issue number | 66 |
| DOIs | |
| Publication status | Published - 2020 Aug 25 |
ASJC Scopus subject areas
- Catalysis
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Chemistry(all)
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry