Epitaxial growth of b-axis oriented BaTi2O5 films by laser ablation

Chuanbin Wang, Rong Tu, Takashi Goto

Research output: Contribution to journalArticlepeer-review

Abstract

A new lead-free ferroelectric BaTi2O5 film was first prepared by laser ablation. BaTi2O5 films in a single phase were obtained at substrate temperatures (Tsub) from 900 to 1050 K and oxygen partial pressures (Po2) from vacuum (10-6 Pa) to 30 Pa. The films exhibited a (710) and/or (020) preferred orientation, depending on Tsub and Po2. At Po2 = 12.5 Pa and Tsub = 950 - 1000 K, the BaTi2O5 film was b-axis oriented and epitaxially grown on MgO (100) substrate with a rectangularly crossed texture. The epitaxial growth relationship between the film and the substrate were BaTi2O5 (020) [100] // MgO (100) [001] and BaTi2O5 (020) [100] // MgO (100) [010].

Original languageEnglish
Pages (from-to)311-314
Number of pages4
JournalKey Engineering Materials
Volume352
DOIs
Publication statusPublished - 2007 Jan 1

Keywords

  • BaTiO films
  • Epitaxial growth
  • Laser ablation
  • b-axis orientation

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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