Epitaxial growth of 3C–SiC on Si(111) and (001) by laser CVD

Peipei Zhu, Meijun Yang, Qingfang Xu, Qingyun Sun, Rong Tu, Jun Li, Song Zhang, Qizhong Li, Lianmeng Zhang, Takashi Goto, Ji Shi, Haiwen Li, Hitoshi Ohmori, Marina Kosinova, Bikramjit Basu

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Epitaxial 3C–SiC films have been deposited on Si(111) and Si(001) substrates via laser CVD with deposition rate of 12.32 and 15.56 μm/h, respectively. The activation energy of 3C–SiC on Si(111) and Si(001) was 80 and 160 kJ/mol, and the root mean square (RMS) roughness (w) as a function of the film thickness (h) follows power laws of w~h0.31 and w~h0.06, respectively. The growth mechanisms of epitaxial 3C–SiC films on Si(111) and Si(001) was investigated based on the structural analysis and roughness evolution.

Original languageEnglish
Pages (from-to)3850-3856
Number of pages7
JournalJournal of the American Ceramic Society
Volume101
Issue number9
DOIs
Publication statusPublished - 2018 Sep

Keywords

  • 3C–SiC
  • epitaxial growth
  • laser chemical vapor deposition
  • microstructure

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

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  • Cite this

    Zhu, P., Yang, M., Xu, Q., Sun, Q., Tu, R., Li, J., Zhang, S., Li, Q., Zhang, L., Goto, T., Shi, J., Li, H., Ohmori, H., Kosinova, M., & Basu, B. (2018). Epitaxial growth of 3C–SiC on Si(111) and (001) by laser CVD. Journal of the American Ceramic Society, 101(9), 3850-3856. https://doi.org/10.1111/jace.15557