Epitaxial growth of (001)-oriented titanium nitride thin films by N implantation

Y. Kasukabe; A. Ito; S. Nagata; M. Kishimoto; Y. Fujino; S. Yamaguchi; Y. Yamada

doi:10.1116/1.581047

Epitaxial growth of (001)-oriented titanium nitride thin films by N implantation

Y. Kasukabe, A. Ito, S. Nagata, M. Kishimoto, Y. Fujino, S. Yamaguchi, Y. Yamada

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The epitaxial growth process of titanium nitride (TiN) films, formed by implanting nitrogen ions (N⁺₂) with 62 keV into 100-nm-thick Ti films grown on NaCl substrates held at 250°C, has been studied by transmission electron microscopy. Rutherford backscattering spectrometry, and elastic recoil detection analysis. It has been revealed that the (001)-oriented TiN_y is epitaxially grown by N implantation into the as-grown (03·5)-oriented hcp Ti. The TiN_y is formed by the transformation of the hcp Ti to (001)-oriented fcc Ti during the N implantation, partially inheriting the atomic arrangement of the square and/or the octahedron of the hcp Ti, as well as the occupation of N in octahedral sites of the fcc Ti. Strain due to the expansion of the lattice and/or the volume of hcp Ti by N implantation can be considered as one of the driving forces for the hcp-fcc transformation of the Ti lattice. The nitriding mechanism of epitaxial Ti thin films is discussed.

Original language	English
Pages (from-to)	482-489
Number of pages	8
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	16
Issue number	2
DOIs	https://doi.org/10.1116/1.581047
Publication status	Published - 1998

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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@article{13e8b14de7d94d04972508e9969f6219,

title = "Epitaxial growth of (001)-oriented titanium nitride thin films by N implantation",

abstract = "The epitaxial growth process of titanium nitride (TiN) films, formed by implanting nitrogen ions (N+2) with 62 keV into 100-nm-thick Ti films grown on NaCl substrates held at 250°C, has been studied by transmission electron microscopy. Rutherford backscattering spectrometry, and elastic recoil detection analysis. It has been revealed that the (001)-oriented TiNy is epitaxially grown by N implantation into the as-grown (03·5)-oriented hcp Ti. The TiNy is formed by the transformation of the hcp Ti to (001)-oriented fcc Ti during the N implantation, partially inheriting the atomic arrangement of the square and/or the octahedron of the hcp Ti, as well as the occupation of N in octahedral sites of the fcc Ti. Strain due to the expansion of the lattice and/or the volume of hcp Ti by N implantation can be considered as one of the driving forces for the hcp-fcc transformation of the Ti lattice. The nitriding mechanism of epitaxial Ti thin films is discussed.",

author = "Y. Kasukabe and A. Ito and S. Nagata and M. Kishimoto and Y. Fujino and S. Yamaguchi and Y. Yamada",

year = "1998",

doi = "10.1116/1.581047",

language = "English",

volume = "16",

pages = "482--489",

journal = "Journal of Vacuum Science and Technology A",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "2",

}

TY - JOUR

T1 - Epitaxial growth of (001)-oriented titanium nitride thin films by N implantation

AU - Kasukabe, Y.

AU - Ito, A.

AU - Nagata, S.

AU - Kishimoto, M.

AU - Fujino, Y.

AU - Yamaguchi, S.

AU - Yamada, Y.

PY - 1998

Y1 - 1998

N2 - The epitaxial growth process of titanium nitride (TiN) films, formed by implanting nitrogen ions (N+2) with 62 keV into 100-nm-thick Ti films grown on NaCl substrates held at 250°C, has been studied by transmission electron microscopy. Rutherford backscattering spectrometry, and elastic recoil detection analysis. It has been revealed that the (001)-oriented TiNy is epitaxially grown by N implantation into the as-grown (03·5)-oriented hcp Ti. The TiNy is formed by the transformation of the hcp Ti to (001)-oriented fcc Ti during the N implantation, partially inheriting the atomic arrangement of the square and/or the octahedron of the hcp Ti, as well as the occupation of N in octahedral sites of the fcc Ti. Strain due to the expansion of the lattice and/or the volume of hcp Ti by N implantation can be considered as one of the driving forces for the hcp-fcc transformation of the Ti lattice. The nitriding mechanism of epitaxial Ti thin films is discussed.

AB - The epitaxial growth process of titanium nitride (TiN) films, formed by implanting nitrogen ions (N+2) with 62 keV into 100-nm-thick Ti films grown on NaCl substrates held at 250°C, has been studied by transmission electron microscopy. Rutherford backscattering spectrometry, and elastic recoil detection analysis. It has been revealed that the (001)-oriented TiNy is epitaxially grown by N implantation into the as-grown (03·5)-oriented hcp Ti. The TiNy is formed by the transformation of the hcp Ti to (001)-oriented fcc Ti during the N implantation, partially inheriting the atomic arrangement of the square and/or the octahedron of the hcp Ti, as well as the occupation of N in octahedral sites of the fcc Ti. Strain due to the expansion of the lattice and/or the volume of hcp Ti by N implantation can be considered as one of the driving forces for the hcp-fcc transformation of the Ti lattice. The nitriding mechanism of epitaxial Ti thin films is discussed.

UR - http://www.scopus.com/inward/record.url?scp=0032372026&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032372026&partnerID=8YFLogxK

U2 - 10.1116/1.581047

DO - 10.1116/1.581047

M3 - Article

AN - SCOPUS:0032372026

VL - 16

SP - 482

EP - 489

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

SN - 0734-2101

IS - 2

ER -

Epitaxial growth of (001)-oriented titanium nitride thin films by N implantation

Abstract

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