TY - JOUR
T1 - Epitaxial growth and optical properties of semipolar (112̄2) GaN and InGaN/GaN quantum wells on GaN bulk substrates
AU - Ueda, M.
AU - Kojima, K.
AU - Funato, M.
AU - Kawakami, Y.
AU - Narukawa, Y.
AU - Mukai, T.
N1 - Funding Information:
The authors acknowledge A. Kaneta (Kyoto Univ.) for his help in the experiments and data analyses. This work is partially supported by Grants for Regional Science and Technology Promotion from the Ministry of Education, Culture, Sports, Science and Technology and the 21st Century COE Program (No. 14213201). Figure was drawn with VENUS developed by Drs. Dilanian and Izumi.
PY - 2006
Y1 - 2006
N2 - GaN and InGaNGaN multiple quantum well (MQW) were grown on semipolar (11 2- 2) GaN bulk substrates by metal organic vapor phase epitaxy. The GaN homoepitaxial layer has an atomically flat surface. Optical reflection measurements reveal polarization anisotropy for the A, B, and C excitons. Free A excitons dominate the photoluminescence (PL) spectrum at 10 K and are accompanied by a weaker, sharp doublet emission due to neutral donor-bound excitons. The InGaNGaN MQW grown on a GaN homoepitaxial layer involves fast radiative recombination processes. The PL decay monitored at 428 nm can be fitted with a double exponential curve, which has lifetimes of 46 and 142 ps at 10 K. These values are two orders of magnitude shorter than those in conventional c -oriented QWs and are attributed to the weakened internal electric field. The emissions from GaN and MQW polarize along the [1 1- 00] direction with polarization degrees of 0.46 and 0.69, respectively, due to the low crystal symmetry.
AB - GaN and InGaNGaN multiple quantum well (MQW) were grown on semipolar (11 2- 2) GaN bulk substrates by metal organic vapor phase epitaxy. The GaN homoepitaxial layer has an atomically flat surface. Optical reflection measurements reveal polarization anisotropy for the A, B, and C excitons. Free A excitons dominate the photoluminescence (PL) spectrum at 10 K and are accompanied by a weaker, sharp doublet emission due to neutral donor-bound excitons. The InGaNGaN MQW grown on a GaN homoepitaxial layer involves fast radiative recombination processes. The PL decay monitored at 428 nm can be fitted with a double exponential curve, which has lifetimes of 46 and 142 ps at 10 K. These values are two orders of magnitude shorter than those in conventional c -oriented QWs and are attributed to the weakened internal electric field. The emissions from GaN and MQW polarize along the [1 1- 00] direction with polarization degrees of 0.46 and 0.69, respectively, due to the low crystal symmetry.
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U2 - 10.1063/1.2397029
DO - 10.1063/1.2397029
M3 - Article
AN - SCOPUS:33845463122
VL - 89
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 21
M1 - 211907
ER -