Epitaxial growth and electronic structure of oxyhydride SrVO2H thin films

Tsukasa Katayama, Akira Chikamatsu, Keisuke Yamada, Kei Shigematsu, Tomoya Onozuka, Makoto Minohara, Hiroshi Kumigashira, Eiji Ikenaga, Tetsuya Hasegawa

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

Oxyhydride SrVO2H epitaxial thin films were fabricated on SrTiO3 substrates via topotactic hydridation of oxide SrVO3 films using CaH2. Structural and composition analyses suggested that the SrVO2H film possessed one-dimensionally ordered V-H--V bonds along the out-of-plane direction. The synthesis temperature could be lowered by reducing the film thickness, and the SrVO2H film was reversible to SrVO3 by oxidation through annealing in air. Photoemission and X-ray absorption spectroscopy measurements revealed the V3+ valence state in the SrVO2H film, indicating that the hydrogen existed as hydride. Furthermore, the electronic density of states was highly suppressed at the Fermi energy, consistent with the prediction that tetragonal distortion induces metal to insulation transition.

Original languageEnglish
Article number085305
JournalJournal of Applied Physics
Volume120
Issue number8
DOIs
Publication statusPublished - 2016 Aug 28
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Epitaxial growth and electronic structure of oxyhydride SrVO<sub>2</sub>H thin films'. Together they form a unique fingerprint.

Cite this