Epitaxial growth and electric properties of?-Al2O3(110) films on β-Ga2O3(010) substrates

Mai Hattori, Takayoshi Oshima, Ryo Wakabayashi, Kohei Yoshimatsu, Kohei Sasaki, Takekazu Masui, Akito Kuramata, Shigenobu Yamakoshi, Koji Horiba, Hiroshi Kumigashira, Akira Ohtomo

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31 Citations (Scopus)

Abstract

Epitaxial growth and electrical properties of γ-Al2O3 films on β-Ga2O3(010) substrates were investigated regarding the prospect of a gate oxide in a β-Ga2O3-based MOSFET. The γ-Al2O3 films grew along the [110] direction and inherited the oxygen sublattice from β-Ga2O3 resulting in the unique in-plane epitaxial relationship of γ-Al2O3=110 k β-Ga2O3[001]. We found that the γ-Al2O3 layer had a band gap of 7.0 eV and a type-I band alignment with β-Ga2O3 with conduction-and valence-band offsets of 1.9 and 0.5 eV, respectively. A relatively high trap density (2 × 1012 cm-2 eV-1) was found from the voltage shift of photoassisted capacitance-voltage curves measured for a Au/γ-Al2O3/β-Ga2O3 MOS capacitor. These results indicate good structural and electric properties and some limitations hindering the better understanding of the role of the gate dielectrics (a γ-Al2O3 interface layer naturally crystallized from amorphous Al2O3) in the β-Ga2O3 MOSFET.

Original languageEnglish
Article number1202B6
JournalJapanese journal of applied physics
Volume55
Issue number12
DOIs
Publication statusPublished - 2016 Dec
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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