Epitaxial growth and domain coalescence of sexithiophene induced by the steps on cleaved KBr(0 0 1)

Susumu Ikeda, Manabu Kiguchi, Yuji Yoshida, Kiyoshi Yase, Toru Mitsunaga, Katsuhiko Inaba, Koichiro Saiki

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

Epitaxial growth of sexithiophene (6 T) thin films was achieved on KBr (0 0 1) under the optimum condition. Atomic force microscopy revealed that the initially formed in-plane orientation was caused by adsorption of 6 T molecules to the native steps on KBr and it helped formation of single-crystalline domains larger than 30×30μm2. The use of substrate steps as an epitaxial template shows the possibility to create high quality 6T films with potentially large carrier mobility.

Original languageEnglish
Pages (from-to)296-301
Number of pages6
JournalJournal of Crystal Growth
Volume265
Issue number1-2
DOIs
Publication statusPublished - 2004 Apr 15
Externally publishedYes

Keywords

  • A1. Atomic force microscopy
  • A1. X-ray diffraction
  • A3. Molecular beam epitaxy
  • B1. KBr
  • B1. Sexithiophene
  • B2. Organic semiconductor

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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