Epitaxial graphene top-gate FETs on silicon substrates

Hyun Chul Kang, Hiromi Karasawa, Yu Miyamoto, Hiroyuki Handa, Hirokazu Fukidome, Tetsuya Suemitsu, Maki Suemitsu, Taiichi Otsuji

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

This paper reports preparation of top-gate epitaxial graphene FETs (EGFETs) on silicon substrates. Epitaxial graphene is obtained from a thermal decomposition at the surface of a 3C-SiC layer grown on Si substrates. We provide the first demonstration and comparison of the EGFETs fabricated on Si(1 1 0) and Si(1 1 1) substrates. For all EGFETs, an n-type transistor operation is observed by the gate voltage modulation. We find that the Si(1 1 1) substrates give better flatness at the surface of the 3C-SiC layer. As a result, the EGFETs fabricated on Si(1 1 1) substrates exhibit higher channel currents than those on Si(1 1 0) substrates.

Original languageEnglish
Pages (from-to)1071-1075
Number of pages5
JournalSolid-State Electronics
Volume54
Issue number10
DOIs
Publication statusPublished - 2010 Oct 1

Keywords

  • Contact resistance
  • FET
  • Graphene
  • Sheet resistance
  • Silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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