Epitaxial graphene top-gate FETs on silicon substrates

Hyun Chul Kang; Hiromi Karasawa; Yu Miyamoto; Hiroyuki Handa; Hirokazu Fukidome; Tetsuya Suemitsu; Maki Suemitsu; Taiichi Otsuji

doi:10.1109/ISDRS.2009.5378157

Epitaxial graphene top-gate FETs on silicon substrates

Hyun Chul Kang, Hiromi Karasawa, Yu Miyamoto, Hiroyuki Handa, Hirokazu Fukidome, Tetsuya Suemitsu, Maki Suemitsu, Taiichi Otsuji

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Citations (Scopus)

Original language	English
Title of host publication	2009 International Semiconductor Device Research Symposium, ISDRS '09
DOIs	https://doi.org/10.1109/ISDRS.2009.5378157
Publication status	Published - 2009
Event	2009 International Semiconductor Device Research Symposium, ISDRS '09 - College Park, MD, United States Duration: 2009 Dec 9 → 2009 Dec 11

Publication series

Name	2009 International Semiconductor Device Research Symposium, ISDRS '09

Other

Other	2009 International Semiconductor Device Research Symposium, ISDRS '09
Country/Territory	United States
City	College Park, MD
Period	09/12/9 → 09/12/11

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ISDRS.2009.5378157

Cite this

Kang, HC, Karasawa, H, Miyamoto, Y, Handa, H, Fukidome, H , Suemitsu, T, Suemitsu, M & Otsuji, T 2009, Epitaxial graphene top-gate FETs on silicon substrates. in 2009 International Semiconductor Device Research Symposium, ISDRS '09., 5378157, 2009 International Semiconductor Device Research Symposium, ISDRS '09, 2009 International Semiconductor Device Research Symposium, ISDRS '09, College Park, MD, United States, 09/12/9. https://doi.org/10.1109/ISDRS.2009.5378157

@inproceedings{5b282fe271bc4244887ed01fe7082357,

title = "Epitaxial graphene top-gate FETs on silicon substrates",

author = "Kang, {Hyun Chul} and Hiromi Karasawa and Yu Miyamoto and Hiroyuki Handa and Hirokazu Fukidome and Tetsuya Suemitsu and Maki Suemitsu and Taiichi Otsuji",

note = "Funding Information: The Project is supported by JST-CREST. The device process in this work was carried out at the Laboratory for Nanoelectronics and Spintronics in the Research Institute of Electrical Communication, Tohoku University.; 2009 International Semiconductor Device Research Symposium, ISDRS '09 ; Conference date: 09-12-2009 Through 11-12-2009",

year = "2009",

doi = "10.1109/ISDRS.2009.5378157",

language = "English",

isbn = "9781424460304",

series = "2009 International Semiconductor Device Research Symposium, ISDRS '09",

booktitle = "2009 International Semiconductor Device Research Symposium, ISDRS '09",

}

TY - GEN

T1 - Epitaxial graphene top-gate FETs on silicon substrates

AU - Kang, Hyun Chul

AU - Karasawa, Hiromi

AU - Miyamoto, Yu

AU - Handa, Hiroyuki

AU - Fukidome, Hirokazu

AU - Suemitsu, Tetsuya

AU - Suemitsu, Maki

AU - Otsuji, Taiichi

N1 - Funding Information: The Project is supported by JST-CREST. The device process in this work was carried out at the Laboratory for Nanoelectronics and Spintronics in the Research Institute of Electrical Communication, Tohoku University.

PY - 2009

Y1 - 2009

UR - http://www.scopus.com/inward/record.url?scp=77949388862&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77949388862&partnerID=8YFLogxK

U2 - 10.1109/ISDRS.2009.5378157

DO - 10.1109/ISDRS.2009.5378157

M3 - Conference contribution

AN - SCOPUS:77949388862

SN - 9781424460304

T3 - 2009 International Semiconductor Device Research Symposium, ISDRS '09

BT - 2009 International Semiconductor Device Research Symposium, ISDRS '09

T2 - 2009 International Semiconductor Device Research Symposium, ISDRS '09

Y2 - 9 December 2009 through 11 December 2009

ER -

Epitaxial graphene top-gate FETs on silicon substrates

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Other

ASJC Scopus subject areas

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