Epitaxial graphene on silicon substrates

M. Suemitsu, H. Fukidome

Research output: Contribution to journalArticlepeer-review

89 Citations (Scopus)

Abstract

By forming an ultrathin (∼100 nm) SiC film on Si substrates and by annealing it at ∼1500 K in vacuo, few-layer graphene is formed on Si substrates. Graphene grows on three major low-index surfaces: (1 1 1), (1 0 0) and (1 1 0), allowing us to tune its electronic properties by controlling the crystallographic orientation of the substrate. This graphene on silicon (GOS) technology thus paves the way to industrialization of this new material with inherent excellence. With its feasibility in Si technology, GOS is one of the most promising candidates as a material for Beyond CMOS technology.

Original languageEnglish
Article number374012
JournalJournal of Physics D: Applied Physics
Volume43
Issue number37
DOIs
Publication statusPublished - 2010 Sep 22

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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