Epitaxial graphene field effect transistors on silicon substrates

Hyun Chul Kang, Hiromi Karasawa, Yu Miyamoto, Hiroyuki Handa, Tetsuya Suemitsu, Maki Suemitsu, Taiichi Otsuji

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We have fabricated and characterized the field effect transistors having epitaxial-graphene channel grown on Si substrates. Epitaxial graphene is usually formed on SiC substrates by ultrahigh-vacuum (UHV) annealing. We used an approach to grow 3C-SiC(111) on Si substrates and subsequently to anneal it in UHV to make few layers of graphene on the sample surface. Backgate transistors using the SiC layer as a gate insulator was characterized. Although significant gate leakage current is observed, the drain current modulation by the gate voltage is confirmed by extracting the channel current from the total drain current. The drain saturation current of the graphene-channel transistors is in the order of mA/mm due to the large contact resistance that should be minimized in future study.

Original languageEnglish
Title of host publicationESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference
Pages189-192
Number of pages4
DOIs
Publication statusPublished - 2009 Dec 1
Event39th European Solid-State Device Research Conference, ESSDERC 2009 - Athens, Greece
Duration: 2009 Sep 142009 Sep 18

Publication series

NameESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference

Other

Other39th European Solid-State Device Research Conference, ESSDERC 2009
CountryGreece
CityAthens
Period09/9/1409/9/18

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety Research

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  • Cite this

    Kang, H. C., Karasawa, H., Miyamoto, Y., Handa, H., Suemitsu, T., Suemitsu, M., & Otsuji, T. (2009). Epitaxial graphene field effect transistors on silicon substrates. In ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference (pp. 189-192). [5331308] (ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference). https://doi.org/10.1109/ESSDERC.2009.5331308