Epitaxial formation of graphene on Si substrates: From heteroepitaxy of 3C-SiC to Si sublimation

M. Suemitsu, H. Handa, E. Saito, H. Fukidome

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Epitaxial graphene can be formed on Si substrates by a vacuum annealing of a 3C-SiC thin film preformed on Si substrate. In this graphene-on-silicon (GOS) method, graphene grows on three major low-index planes of Si substrates: Si(111), (110), and (100). Despite the difference in the quality of the SiC film depending on the orientation, the quality of the formed graphene shows very little variation, leaving the growth mechanism of graphene on cubic SiC crystals open to future studies. The growth rate of graphene, however, shows a sharp dependence on the orientation, which increases in the order of(111) < (001) < (110).

Original languageEnglish
Title of host publicationSiGe, Ge, and Related Compounds 4
Subtitle of host publicationMaterials, Processing, and Devices
Pages859-867
Number of pages9
Edition6
DOIs
Publication statusPublished - 2010 Dec 1
Event4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting - Las Vegas, NV, United States
Duration: 2010 Oct 102010 Oct 15

Publication series

NameECS Transactions
Number6
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10/10/1010/10/15

ASJC Scopus subject areas

  • Engineering(all)

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    Suemitsu, M., Handa, H., Saito, E., & Fukidome, H. (2010). Epitaxial formation of graphene on Si substrates: From heteroepitaxy of 3C-SiC to Si sublimation. In SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices (6 ed., pp. 859-867). (ECS Transactions; Vol. 33, No. 6). https://doi.org/10.1149/1.3487616