Epitaxial CeO2 thin films for a mechanism study of resistive random access memory (ReRAM)

Michiko Yoshitake, Michal Vaclavu, Mykhailo Chundak, Vladimir Matolin, Toyohiro Chikyow

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A thin epitaxial CeO2 film was grown on a Cu(111) single crystal in order to investigate the mechanism of resistive memory/switching devices with an ultimately thin high-k dielectric film. A small amount of Pt was deposited on the CeO2 film and the Pt/CeO2/Cu structure was characterized by conductive atomic force microscopy and X-ray photoelectron spectroscopy. It was found that the grown epitaxial CeO2 film was fully oxidized, i.e., the valence of Ce atoms in the film was completely Ce4+. However, after the deposition of a small amount of Pt, it was revealed that Ce atoms were partially reduced to Ce3+ in full thickness of the film. The Pt/CeO2/Cu structure did not show switching behavior in resistance. The observed reduction of CeO2 film is considered to be responsible to the non-switching behavior. The thermodynamics of the reduction of the CeO2 film and the kinetics of oxygen diffusion in the reduced CeO2 film are discussed.

Original languageEnglish
Pages (from-to)3137-3144
Number of pages8
JournalJournal of Solid State Electrochemistry
Volume17
Issue number12
DOIs
Publication statusPublished - 2013 Aug 26
Externally publishedYes

Keywords

  • Ceria
  • I-V curve
  • Memory
  • ReRAM
  • Reduction
  • XPS

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrochemistry
  • Electrical and Electronic Engineering

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