Abstract
A thin epitaxial CeO2 film was grown on a Cu(111) single crystal in order to investigate the mechanism of resistive memory/switching devices with an ultimately thin high-k dielectric film. A small amount of Pt was deposited on the CeO2 film and the Pt/CeO2/Cu structure was characterized by conductive atomic force microscopy and X-ray photoelectron spectroscopy. It was found that the grown epitaxial CeO2 film was fully oxidized, i.e., the valence of Ce atoms in the film was completely Ce4+. However, after the deposition of a small amount of Pt, it was revealed that Ce atoms were partially reduced to Ce3+ in full thickness of the film. The Pt/CeO2/Cu structure did not show switching behavior in resistance. The observed reduction of CeO2 film is considered to be responsible to the non-switching behavior. The thermodynamics of the reduction of the CeO2 film and the kinetics of oxygen diffusion in the reduced CeO2 film are discussed.
Original language | English |
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Pages (from-to) | 3137-3144 |
Number of pages | 8 |
Journal | Journal of Solid State Electrochemistry |
Volume | 17 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2013 Aug 26 |
Externally published | Yes |
Keywords
- Ceria
- I-V curve
- Memory
- ReRAM
- Reduction
- XPS
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Electrochemistry
- Electrical and Electronic Engineering