Epitaxial CeO2 growth on Si (111) for SOI

L. Tye; T. Chikyow; N. A. El-Masry; S. M. Bedair

doi:10.1557/proc-341-107

Epitaxial CeO₂ growth on Si (111) for SOI

L. Tye, T. Chikyow, N. A. El-Masry, S. M. Bedair

Advanced Institute for Materials Research (AIMR)

Research output: Contribution to journal › Conference article › peer-review

6 Citations (Scopus)

Abstract

Epitaxial growth of CeO₂ was obtained on the Si(111) surface by laser ablation in UHV atmosphere. However, a dual amorphous layer formed at the interface, yielding a CeO₂/α-CeO_x/α-SiO₂/Si(111) structure. This structure is speculated to be caused by a reaction occurring between Ce oxide and Si. Post annealing in O₂ ambient caused the regrowth of CeO₂, eliminated the α-CeO_x layer, and increased the thickness of the SiO₂ layer. The new CeO₂/SiO₂/Si(111) structure shows improved breakdown voltage and fewer interfacial states as observed by C-V and I-V measurements. The SiO₂ is expected to tie surface states with Si, whereas the single crystal CeO₂ will allow the epitaxial growth of lattice-matched Si on this insulating film. The effect of growth conditions and O₂ annealing on both the structural and the electrical properties of this epitaxial oxide will be presented.

Original language	English
Pages (from-to)	107-112
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	341
DOIs	https://doi.org/10.1557/proc-341-107
Publication status	Published - 1994 Jan 1
Event	Proceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA Duration: 1994 Apr 4 → 1994 Apr 8

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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abstract = "Epitaxial growth of CeO2 was obtained on the Si(111) surface by laser ablation in UHV atmosphere. However, a dual amorphous layer formed at the interface, yielding a CeO2/α-CeOx/α-SiO2/Si(111) structure. This structure is speculated to be caused by a reaction occurring between Ce oxide and Si. Post annealing in O2 ambient caused the regrowth of CeO2, eliminated the α-CeOx layer, and increased the thickness of the SiO2 layer. The new CeO2/SiO2/Si(111) structure shows improved breakdown voltage and fewer interfacial states as observed by C-V and I-V measurements. The SiO2 is expected to tie surface states with Si, whereas the single crystal CeO2 will allow the epitaxial growth of lattice-matched Si on this insulating film. The effect of growth conditions and O2 annealing on both the structural and the electrical properties of this epitaxial oxide will be presented.",

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T1 - Epitaxial CeO2 growth on Si (111) for SOI

AU - Tye, L.

AU - Chikyow, T.

AU - El-Masry, N. A.

AU - Bedair, S. M.

PY - 1994/1/1

Y1 - 1994/1/1

N2 - Epitaxial growth of CeO2 was obtained on the Si(111) surface by laser ablation in UHV atmosphere. However, a dual amorphous layer formed at the interface, yielding a CeO2/α-CeOx/α-SiO2/Si(111) structure. This structure is speculated to be caused by a reaction occurring between Ce oxide and Si. Post annealing in O2 ambient caused the regrowth of CeO2, eliminated the α-CeOx layer, and increased the thickness of the SiO2 layer. The new CeO2/SiO2/Si(111) structure shows improved breakdown voltage and fewer interfacial states as observed by C-V and I-V measurements. The SiO2 is expected to tie surface states with Si, whereas the single crystal CeO2 will allow the epitaxial growth of lattice-matched Si on this insulating film. The effect of growth conditions and O2 annealing on both the structural and the electrical properties of this epitaxial oxide will be presented.

AB - Epitaxial growth of CeO2 was obtained on the Si(111) surface by laser ablation in UHV atmosphere. However, a dual amorphous layer formed at the interface, yielding a CeO2/α-CeOx/α-SiO2/Si(111) structure. This structure is speculated to be caused by a reaction occurring between Ce oxide and Si. Post annealing in O2 ambient caused the regrowth of CeO2, eliminated the α-CeOx layer, and increased the thickness of the SiO2 layer. The new CeO2/SiO2/Si(111) structure shows improved breakdown voltage and fewer interfacial states as observed by C-V and I-V measurements. The SiO2 is expected to tie surface states with Si, whereas the single crystal CeO2 will allow the epitaxial growth of lattice-matched Si on this insulating film. The effect of growth conditions and O2 annealing on both the structural and the electrical properties of this epitaxial oxide will be presented.

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