Epitaxial CeO2 growth on Si (111) for SOI

L. Tye, T. Chikyow, N. A. El-Masry, S. M. Bedair

Research output: Contribution to journalConference article

6 Citations (Scopus)

Abstract

Epitaxial growth of CeO2 was obtained on the Si(111) surface by laser ablation in UHV atmosphere. However, a dual amorphous layer formed at the interface, yielding a CeO2/α-CeOx/α-SiO2/Si(111) structure. This structure is speculated to be caused by a reaction occurring between Ce oxide and Si. Post annealing in O2 ambient caused the regrowth of CeO2, eliminated the α-CeOx layer, and increased the thickness of the SiO2 layer. The new CeO2/SiO2/Si(111) structure shows improved breakdown voltage and fewer interfacial states as observed by C-V and I-V measurements. The SiO2 is expected to tie surface states with Si, whereas the single crystal CeO2 will allow the epitaxial growth of lattice-matched Si on this insulating film. The effect of growth conditions and O2 annealing on both the structural and the electrical properties of this epitaxial oxide will be presented.

Original languageEnglish
Pages (from-to)107-112
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume341
DOIs
Publication statusPublished - 1994 Jan 1
EventProceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA
Duration: 1994 Apr 41994 Apr 8

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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