EOT of 0.62 nm and high electron mobility in La-silicate/Si structure based nMOSFETs achieved by utilizing metal-inserted poly-si stacks and annealing at high temperature

Takamasa Kawanago, Yeonghun Lee, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai

Research output: Contribution to journal › Article › peer-review

39 Citations (Scopus)

Fingerprint

Dive into the research topics of 'EOT of 0.62 nm and high electron mobility in La-silicate/Si structure based nMOSFETs achieved by utilizing metal-inserted poly-si stacks and annealing at high temperature'. Together they form a unique fingerprint.

Chemistry

Engineering

Earth and Planetary Sciences

Physics

Material Science