EOT measurement for ultra-thin gate dielectrics using LC resonance circuit

A. Teramoto, M. Komura, R. Kuroda, K. Watanabe, S. Sugawa, T. Ohmi

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

The EOT measurement method using the LC Resonance Circuit (LC resonance method) for the thin gate dielectrics having large leakage current is demonstrated. In the LC resonance method, only an external inductance and a resistance and a simple equivalent electrical circuit of MOS devices are employed. The EOT value from thicker gate dielectrics (∼10 nm) to thinner gate dielectrics (∼1 nm) with large leakage current can be defined by the impedance-frequency characteristics at the resonance and be verified at other frequency region and DC gate current -gate voltage characteristics.

Original languageEnglish
Pages223-227
Number of pages5
Publication statusPublished - 2005 Nov 15
EventICMTS 2005 - 2005 IEEE International Conference on Microelectronic Test Structures - Leuven, Belgium
Duration: 2005 Apr 42005 Apr 7

Other

OtherICMTS 2005 - 2005 IEEE International Conference on Microelectronic Test Structures
CountryBelgium
CityLeuven
Period05/4/405/4/7

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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