TY - JOUR
T1 - Environmentally harmonized C F3 i plasma for low-damage and highly selective low- k etching
AU - Samukawa, Seiji
AU - Ichihashi, Yoshinari
AU - Ohtake, Hiroto
AU - Soda, Eiichi
AU - Saito, Shuichi
PY - 2008/3/24
Y1 - 2008/3/24
N2 - Low-damage, high-rate, and highly selective low- k etching can be simultaneously satisfied using a plasma with an environmentally harmonized gas chemistry (C F3 I). Such a C F3 I plasma can drastically reduce the irradiation damage by ultraviolet (UV) photons during low- k etching, because the intensity of UV in C F3 I plasma is much lower than that in conventional C F4 plasma. The etching selectivity of SiOCH to a photoresist can be drastically improved by using C F3 I plasma because of reducing F radical generation. In addition, pulse-time-modulated C F3 I plasma causes a drastic increase in the etching rate because a large amount of negative ions can be generated. These results show that C F3 I plasma is a very promising candidate for low-damage and highly selective low- k etching.
AB - Low-damage, high-rate, and highly selective low- k etching can be simultaneously satisfied using a plasma with an environmentally harmonized gas chemistry (C F3 I). Such a C F3 I plasma can drastically reduce the irradiation damage by ultraviolet (UV) photons during low- k etching, because the intensity of UV in C F3 I plasma is much lower than that in conventional C F4 plasma. The etching selectivity of SiOCH to a photoresist can be drastically improved by using C F3 I plasma because of reducing F radical generation. In addition, pulse-time-modulated C F3 I plasma causes a drastic increase in the etching rate because a large amount of negative ions can be generated. These results show that C F3 I plasma is a very promising candidate for low-damage and highly selective low- k etching.
UR - http://www.scopus.com/inward/record.url?scp=40849118435&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=40849118435&partnerID=8YFLogxK
U2 - 10.1063/1.2887987
DO - 10.1063/1.2887987
M3 - Article
AN - SCOPUS:40849118435
VL - 103
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 5
M1 - 053310
ER -