Environmentally friendly single-wafer spin cleaning using ultra-diluted HF/nitrogen jet spray without causing structural damage and material loss

Hideki Hirano, Kou Sato, Tsutomu Osaka, Hitoshi Kuniyasu, Takeshi Hattori

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have developed an ultra-diluted HF/nitrogen jet spray cleaning procedure for single-wafer spin cleaning, which can efficiently remove particulate and metallic contaminants in a short period of time from both silicon and silicon-dioxide surfaces without causing damage to fragile 45nm polysilicon gate structures. The use of a very low HF concentration makes the silicon and oxide losses negligible. This very simple single-step cleaning procedure drastically reduces the chemical and water comumption as well as electrical energy per wafer due to the short spraying time with the ultra-diluted HF at room temperature. HF wastewater, the only effluent of this cleaning, is recycled by forming CaF2, which can be a raw material for HF or Portland cement, so this cleaning meets the requirements with respect to the environmental control.

Original languageEnglish
Title of host publicationISSM 2006 Conference Proceedings - Fifteenth International Symposium on Semiconductor Manufacturing
Pages167-170
Number of pages4
DOIs
Publication statusPublished - 2006 Dec 1
Externally publishedYes
EventISSM 2006 - 15th International Symposium on Semiconductor Manufacturing - Tokyo, Japan
Duration: 2007 Sep 252007 Sep 27

Publication series

NameIEEE International Symposium on Semiconductor Manufacturing Conference Proceedings
ISSN (Print)1523-553X

Other

OtherISSM 2006 - 15th International Symposium on Semiconductor Manufacturing
Country/TerritoryJapan
CityTokyo
Period07/9/2507/9/27

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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