Ensemble Monte Carlo/molecular dynamics simulation of electron mobility in silicon with ordered dopant arrays

T. Terunuma, T. Watanabe, T. Shinada, I. Ohdomari, Y. Kamakura, K. Taniguchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Electron transport in bulk silicon with ordered dopant arrays is studied using an ensemble Monte Carlo (EMC) technique coupled with molecular dynamics (MD) method. This work is motivated by a recently developed single-ion implantation (SII) technique, which enables us to fabricate a semiconductor device with an ordered dopant array. We numerically estimate the carrier mobility in silicon with such an ordered dopant array comparing to that with conventional random dopant distribution. The calculation results show that electron mobility can be enhanced in the ordered dopant array if the fluctuation of dopant position is less than 5 nm.

Original languageEnglish
Title of host publication2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages251-254
Number of pages4
ISBN (Print)9781424417537
DOIs
Publication statusPublished - 2008
Externally publishedYes
Event2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008 - Hakone, Japan
Duration: 2008 Sep 92008 Sep 11

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Other

Other2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008
CountryJapan
CityHakone
Period08/9/908/9/11

Keywords

  • Coulomb scattering
  • Electron mobility
  • Ordered dopant arrays
  • Single ion implantation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

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