Enhancing SRAM performance by advanced FinFET device and circuit technology collaboration for 14nm node and beyond

Kazuhiko Endo; Shin Ichi O'Uchi; Takashi Matsukawa; Yongxun Liu; Kunihiro Sakamoto; Wataru Mizubayashi; Shinji Migita; Yukinori Morita; Hiroyuki Ota; Eiichi Suzuki; Meishoku Masahara

Enhancing SRAM performance by advanced FinFET device and circuit technology collaboration for 14nm node and beyond

Kazuhiko Endo, Shin Ichi O'Uchi, Takashi Matsukawa, Yongxun Liu, Kunihiro Sakamoto, Wataru Mizubayashi, Shinji Migita, Yukinori Morita, Hiroyuki Ota, Eiichi Suzuki, Meishoku Masahara

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

This paper presents a high performance and highly reliable SRAM realized by collaboration between advanced FinFET device and circuit technology. As for the device technology, the amorphous metal gate FinFET with the record smallest A_Vt value (=1.34 mVμm) are demonstrated. As for the circuit technology, it is demonstrated that both reliability and performance of SRAM are dramatically enhanced by introducing the independent-double-gate (IDG) FinFET.

Original language	English
Title of host publication	2013 Symposium on VLSI Circuits, VLSIC 2013 - Digest of Technical Papers
Pages	T214-T215
Publication status	Published - 2013 Sept 17
Externally published	Yes
Event	2013 Symposium on VLSI Circuits, VLSIC 2013 - Kyoto, Japan Duration: 2013 Jun 12 → 2013 Jun 14

Publication series

Name	IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Other

Other	2013 Symposium on VLSI Circuits, VLSIC 2013
Country/Territory	Japan
City	Kyoto
Period	13/6/12 → 13/6/14

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

Endo, K., O'Uchi, S. I., Matsukawa, T., Liu, Y., Sakamoto, K., Mizubayashi, W., Migita, S., Morita, Y., Ota, H., Suzuki, E., & Masahara, M. (2013). Enhancing SRAM performance by advanced FinFET device and circuit technology collaboration for 14nm node and beyond. In 2013 Symposium on VLSI Circuits, VLSIC 2013 - Digest of Technical Papers (pp. T214-T215). [6578754] (IEEE Symposium on VLSI Circuits, Digest of Technical Papers).

Enhancing SRAM performance by advanced FinFET device and circuit technology collaboration for 14nm node and beyond. / Endo, Kazuhiko; O'Uchi, Shin Ichi; Matsukawa, Takashi et al.

2013 Symposium on VLSI Circuits, VLSIC 2013 - Digest of Technical Papers. 2013. p. T214-T215 6578754 (IEEE Symposium on VLSI Circuits, Digest of Technical Papers).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Endo, K, O'Uchi, SI, Matsukawa, T, Liu, Y, Sakamoto, K, Mizubayashi, W, Migita, S, Morita, Y, Ota, H, Suzuki, E & Masahara, M 2013, Enhancing SRAM performance by advanced FinFET device and circuit technology collaboration for 14nm node and beyond. in 2013 Symposium on VLSI Circuits, VLSIC 2013 - Digest of Technical Papers., 6578754, IEEE Symposium on VLSI Circuits, Digest of Technical Papers, pp. T214-T215, 2013 Symposium on VLSI Circuits, VLSIC 2013, Kyoto, Japan, 13/6/12.

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abstract = "This paper presents a high performance and highly reliable SRAM realized by collaboration between advanced FinFET device and circuit technology. As for the device technology, the amorphous metal gate FinFET with the record smallest AVt value (=1.34 mVμm) are demonstrated. As for the circuit technology, it is demonstrated that both reliability and performance of SRAM are dramatically enhanced by introducing the independent-double-gate (IDG) FinFET.",

author = "Kazuhiko Endo and O'Uchi, {Shin Ichi} and Takashi Matsukawa and Yongxun Liu and Kunihiro Sakamoto and Wataru Mizubayashi and Shinji Migita and Yukinori Morita and Hiroyuki Ota and Eiichi Suzuki and Meishoku Masahara",

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AU - Matsukawa, Takashi

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AU - Sakamoto, Kunihiro

AU - Mizubayashi, Wataru

AU - Migita, Shinji

AU - Morita, Yukinori

AU - Ota, Hiroyuki

AU - Suzuki, Eiichi

AU - Masahara, Meishoku

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Enhancing SRAM performance by advanced FinFET device and circuit technology collaboration for 14nm node and beyond

Abstract

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