Enhancing SRAM cell performance by using independent double-gate finFET

Kazuhiko Endo; Shin Ichi O'Uchi; Yuki Ishikawa; Yongxun Liu; Takashi Matsukawa; Kunihiro Sakamoto; Junichi Tsukada; Kenichi Ishii; Hiromi Yamauchi; Eiichi Suzuki; Meishoku Masahara

doi:10.1109/IEDM.2008.4796833

Enhancing SRAM cell performance by using independent double-gate finFET

Kazuhiko Endo, Shin Ichi O'Uchi, Yuki Ishikawa, Yongxun Liu, Takashi Matsukawa, Kunihiro Sakamoto, Junichi Tsukada, Kenichi Ishii, Hiromi Yamauchi, Eiichi Suzuki, Meishoku Masahara

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

34 Citations (Scopus)

Abstract

SRAM cells with V_th-controllable independent double-gate (IDG) FinFETs have been successfully fabricated. The performance of the fabricated SRAM cell with various circuit topologies has been investigated comprehensively. Both a reduction of leakage current and an enhancement of read and write noise margins have been successfully demonstrated by introducing the IDG FinFETs into the SRAM cells.

Original language	English
Title of host publication	2008 IEEE International Electron Devices Meeting, IEDM 2008
DOIs	https://doi.org/10.1109/IEDM.2008.4796833
Publication status	Published - 2008 Dec 1
Externally published	Yes
Event	2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States Duration: 2008 Dec 15 → 2008 Dec 17

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2008 IEEE International Electron Devices Meeting, IEDM 2008
Country/Territory	United States
City	San Francisco, CA
Period	08/12/15 → 08/12/17

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2008.4796833

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Endo, K., O'Uchi, S. I., Ishikawa, Y., Liu, Y., Matsukawa, T., Sakamoto, K., Tsukada, J., Ishii, K., Yamauchi, H., Suzuki, E., & Masahara, M. (2008). Enhancing SRAM cell performance by using independent double-gate finFET. In 2008 IEEE International Electron Devices Meeting, IEDM 2008 [4796833] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2008.4796833

Endo, K, O'Uchi, SI, Ishikawa, Y, Liu, Y, Matsukawa, T, Sakamoto, K, Tsukada, J, Ishii, K, Yamauchi, H, Suzuki, E & Masahara, M 2008, Enhancing SRAM cell performance by using independent double-gate finFET. in 2008 IEEE International Electron Devices Meeting, IEDM 2008., 4796833, Technical Digest - International Electron Devices Meeting, IEDM, 2008 IEEE International Electron Devices Meeting, IEDM 2008, San Francisco, CA, United States, 08/12/15. https://doi.org/10.1109/IEDM.2008.4796833

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title = "Enhancing SRAM cell performance by using independent double-gate finFET",

abstract = "SRAM cells with Vth-controllable independent double-gate (IDG) FinFETs have been successfully fabricated. The performance of the fabricated SRAM cell with various circuit topologies has been investigated comprehensively. Both a reduction of leakage current and an enhancement of read and write noise margins have been successfully demonstrated by introducing the IDG FinFETs into the SRAM cells.",

author = "Kazuhiko Endo and O'Uchi, {Shin Ichi} and Yuki Ishikawa and Yongxun Liu and Takashi Matsukawa and Kunihiro Sakamoto and Junichi Tsukada and Kenichi Ishii and Hiromi Yamauchi and Eiichi Suzuki and Meishoku Masahara",

year = "2008",

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doi = "10.1109/IEDM.2008.4796833",

language = "English",

isbn = "9781424423781",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

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AU - Endo, Kazuhiko

AU - O'Uchi, Shin Ichi

AU - Ishikawa, Yuki

AU - Liu, Yongxun

AU - Matsukawa, Takashi

AU - Sakamoto, Kunihiro

AU - Tsukada, Junichi

AU - Ishii, Kenichi

AU - Yamauchi, Hiromi

AU - Suzuki, Eiichi

AU - Masahara, Meishoku

PY - 2008/12/1

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N2 - SRAM cells with Vth-controllable independent double-gate (IDG) FinFETs have been successfully fabricated. The performance of the fabricated SRAM cell with various circuit topologies has been investigated comprehensively. Both a reduction of leakage current and an enhancement of read and write noise margins have been successfully demonstrated by introducing the IDG FinFETs into the SRAM cells.

AB - SRAM cells with Vth-controllable independent double-gate (IDG) FinFETs have been successfully fabricated. The performance of the fabricated SRAM cell with various circuit topologies has been investigated comprehensively. Both a reduction of leakage current and an enhancement of read and write noise margins have been successfully demonstrated by introducing the IDG FinFETs into the SRAM cells.

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DO - 10.1109/IEDM.2008.4796833

M3 - Conference contribution

AN - SCOPUS:64549115311

SN - 9781424423781

T3 - Technical Digest - International Electron Devices Meeting, IEDM

BT - 2008 IEEE International Electron Devices Meeting, IEDM 2008

T2 - 2008 IEEE International Electron Devices Meeting, IEDM 2008

Y2 - 15 December 2008 through 17 December 2008

ER -

Enhancing SRAM cell performance by using independent double-gate finFET

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