Enhancing SRAM cell performance by using independent double-gate finFET

Kazuhiko Endo; Shin Ichi O'Uchi; Yuki Ishikawa; Yongxun Liu; Takashi Matsukawa; Kunihiro Sakamoto; Junichi Tsukada; Kenichi Ishii; Hiromi Yamauchi; Eiichi Suzuki; Meishoku Masahara

doi:10.1109/IEDM.2008.4796833

Enhancing SRAM cell performance by using independent double-gate finFET

Kazuhiko Endo, Shin Ichi O'Uchi, Yuki Ishikawa, Yongxun Liu, Takashi Matsukawa, Kunihiro Sakamoto, Junichi Tsukada, Kenichi Ishii, Hiromi Yamauchi, Eiichi Suzuki, Meishoku Masahara

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

31 Citations (Scopus)

Abstract

SRAM cells with V_th-controllable independent double-gate (IDG) FinFETs have been successfully fabricated. The performance of the fabricated SRAM cell with various circuit topologies has been investigated comprehensively. Both a reduction of leakage current and an enhancement of read and write noise margins have been successfully demonstrated by introducing the IDG FinFETs into the SRAM cells.

Original language	English
Title of host publication	2008 IEEE International Electron Devices Meeting, IEDM 2008
DOIs	https://doi.org/10.1109/IEDM.2008.4796833
Publication status	Published - 2008 Dec 1
Externally published	Yes
Event	2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States Duration: 2008 Dec 15 → 2008 Dec 17

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2008 IEEE International Electron Devices Meeting, IEDM 2008
Country	United States
City	San Francisco, CA
Period	08/12/15 → 08/12/17

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2008.4796833

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Cite this

Endo, K., O'Uchi, S. I., Ishikawa, Y., Liu, Y., Matsukawa, T., Sakamoto, K., Tsukada, J., Ishii, K., Yamauchi, H., Suzuki, E., & Masahara, M. (2008). Enhancing SRAM cell performance by using independent double-gate finFET. In 2008 IEEE International Electron Devices Meeting, IEDM 2008 [4796833] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2008.4796833

Enhancing SRAM cell performance by using independent double-gate finFET. / Endo, Kazuhiko; O'Uchi, Shin Ichi; Ishikawa, Yuki; Liu, Yongxun; Matsukawa, Takashi; Sakamoto, Kunihiro; Tsukada, Junichi; Ishii, Kenichi; Yamauchi, Hiromi; Suzuki, Eiichi; Masahara, Meishoku.

2008 IEEE International Electron Devices Meeting, IEDM 2008. 2008. 4796833 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Endo, K, O'Uchi, SI, Ishikawa, Y, Liu, Y, Matsukawa, T, Sakamoto, K, Tsukada, J, Ishii, K, Yamauchi, H, Suzuki, E & Masahara, M 2008, Enhancing SRAM cell performance by using independent double-gate finFET. in 2008 IEEE International Electron Devices Meeting, IEDM 2008., 4796833, Technical Digest - International Electron Devices Meeting, IEDM, 2008 IEEE International Electron Devices Meeting, IEDM 2008, San Francisco, CA, United States, 08/12/15. https://doi.org/10.1109/IEDM.2008.4796833

Endo, Kazuhiko ; O'Uchi, Shin Ichi ; Ishikawa, Yuki ; Liu, Yongxun ; Matsukawa, Takashi ; Sakamoto, Kunihiro ; Tsukada, Junichi ; Ishii, Kenichi ; Yamauchi, Hiromi ; Suzuki, Eiichi ; Masahara, Meishoku. / Enhancing SRAM cell performance by using independent double-gate finFET. 2008 IEEE International Electron Devices Meeting, IEDM 2008. 2008. (Technical Digest - International Electron Devices Meeting, IEDM).

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