TY - GEN
T1 - Enhancing SRAM cell performance by using independent double-gate finFET
AU - Endo, Kazuhiko
AU - O'Uchi, Shin Ichi
AU - Ishikawa, Yuki
AU - Liu, Yongxun
AU - Matsukawa, Takashi
AU - Sakamoto, Kunihiro
AU - Tsukada, Junichi
AU - Ishii, Kenichi
AU - Yamauchi, Hiromi
AU - Suzuki, Eiichi
AU - Masahara, Meishoku
PY - 2008/12/1
Y1 - 2008/12/1
N2 - SRAM cells with Vth-controllable independent double-gate (IDG) FinFETs have been successfully fabricated. The performance of the fabricated SRAM cell with various circuit topologies has been investigated comprehensively. Both a reduction of leakage current and an enhancement of read and write noise margins have been successfully demonstrated by introducing the IDG FinFETs into the SRAM cells.
AB - SRAM cells with Vth-controllable independent double-gate (IDG) FinFETs have been successfully fabricated. The performance of the fabricated SRAM cell with various circuit topologies has been investigated comprehensively. Both a reduction of leakage current and an enhancement of read and write noise margins have been successfully demonstrated by introducing the IDG FinFETs into the SRAM cells.
UR - http://www.scopus.com/inward/record.url?scp=64549115311&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=64549115311&partnerID=8YFLogxK
U2 - 10.1109/IEDM.2008.4796833
DO - 10.1109/IEDM.2008.4796833
M3 - Conference contribution
AN - SCOPUS:64549115311
SN - 9781424423781
T3 - Technical Digest - International Electron Devices Meeting, IEDM
BT - 2008 IEEE International Electron Devices Meeting, IEDM 2008
T2 - 2008 IEEE International Electron Devices Meeting, IEDM 2008
Y2 - 15 December 2008 through 17 December 2008
ER -