Enhancing single-ion detection efficiency by applying substrate bias voltage for deterministic single-ion doping

Masahiro Hori, Takahiro Shinada, Keigo Taira, Akira Komatsubara, Yukinori Ono, Takashi Tanii, Tetsuo Endoh, Iwao Ohdomari

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

A single-ion implantation technique that enables us to implant dopant ions one-by-one into semiconductors until the desired number is reached has been developed. The key to controlling the ion number is to detect secondary electrons (SEs) emitted from a target upon ion incidence. The SE detection efficiency currently achieved is 90% due to the low probability of SE emission, but has been enhanced to almost 100% by increasing the number of SEs by controlling the substrate bias voltage. This improvement has accelerated the prospects for realizing single-dopant devices, which are necessary for the ultimate control of the ion number.

Original languageEnglish
Article number046501
JournalApplied Physics Express
Volume4
Issue number4
DOIs
Publication statusPublished - 2011 Apr 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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