Enhancing noise margins of finFET SRAM by integrating vth- controllable flexible-pass-gates

Kazuhiko Endo, Shin Ichi O'Uchi, Yuki Ishikawa, Yongxum Liu, Takashi Matsukawa, Meishoku Masahara, Kunihiro Sakamoto, Junichi Tsukada, Kenichi Ishii, Hiromi Yamauchi, Eiichi Suzuki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

We propose a flexible-pass-gate (Flex-PG) FinFET SRAM to enhance both the read and write noise margins. The flip-flop in the Flex-PG SRAM cell consists of usual FinFETs while its pass gates consist of Vth- controllable four-terminal (4T) FinFETs with independent double-gates. We experimentally demonstrate that the proposed Flex-PG SRAM increases both the read and write margins by controlling the Vth of the pass gates.

Original languageEnglish
Title of host publicationESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference
PublisherIEEE Computer Society
Pages146-149
Number of pages4
ISBN (Print)9781424423644
DOIs
Publication statusPublished - 2008 Jan 1
Externally publishedYes
EventESSDERC 2008 - 38th European Solid-State Device Research Conference - Edinburgh, Scotland, United Kingdom
Duration: 2008 Sep 152008 Sep 19

Publication series

NameESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference

Other

OtherESSDERC 2008 - 38th European Solid-State Device Research Conference
CountryUnited Kingdom
CityEdinburgh, Scotland
Period08/9/1508/9/19

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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