We propose a flexible-pass-gate (Flex-PG) fin-type field effect transistor (FinFET) static random access memory (SRAM) cell to enhance both read and write noise margins. The flip-flop in the Flex-PG SRAM cell consists of usual common-gated FinFETs while its pass gates consist of threshold voltage (V th)-controllable four-terminal (4T) FinFETs with independent double-gates. We experimentally demonstrate that the proposed Flex-PG SRAM increases both read and write margins by controlling the Vth of the pass gates.
ASJC Scopus subject areas
- Physics and Astronomy(all)