Enhancing noise margins of fin-type field effect transistor static random access memory cell by using threshold voltage-controllable flexible-pass-gates

Kazuhiko Endo, Shin Ichi O'uchi, Yuki Ishikawa, Yongxum Liu, Takashi Matsukawa, Meishoku Masahara, Kunihiro Sakamoto, Junichi Tsukada, Kenichi Ishii, Hiromi Yamauchi, Eiichi Suzuki

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

We propose a flexible-pass-gate (Flex-PG) fin-type field effect transistor (FinFET) static random access memory (SRAM) cell to enhance both read and write noise margins. The flip-flop in the Flex-PG SRAM cell consists of usual common-gated FinFETs while its pass gates consist of threshold voltage (V th)-controllable four-terminal (4T) FinFETs with independent double-gates. We experimentally demonstrate that the proposed Flex-PG SRAM increases both read and write margins by controlling the Vth of the pass gates.

Original languageEnglish
Article number054502
JournalApplied Physics Express
Volume2
Issue number5
DOIs
Publication statusPublished - 2009 May
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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