Enhancement type InP metal-insulator-semiconductor field-effect transistor with plasma anodic aluminium oxide as the gate insulator

Y. Hirayama, H. M. Park, F. Koshiga, T. Sugano

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)

Abstract

Enhancement type InP metal-insulator-semiconductor field-effect transistors were fabricated using plasma anodic aluminium oxide as the gate insulator. The effective electron mobilities in the surface channel are 1250 cm2/Vs and 2000 cm2/Vs at 300 and 80 K, respectively. The drift of the drain current at 300 K ceases a few minutes after applying a gate voltage and stable dc operation is observed over several hours.

Original languageEnglish
Pages (from-to)712-713
Number of pages2
JournalApplied Physics Letters
Volume40
Issue number8
DOIs
Publication statusPublished - 1982 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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