Enhancement of weak impact ionization in InAlAs/InGaAs HEMTs induced by surface traps: Simulation and experiments

Tetsuya Suemitsu, Masaaki Tomizawa, Takatomo Enoki, Yasunobu Ishii

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The correlation among the impact ionization, the surface traps, and the drain current degradation (kink) has been studied. The two-dimensional device simulation reveals that the increase in the surface traps at the recess region between gate and drain causes an enhancement of the weak impact ionization at low biases. This is one of the possible reasons for the kink phenomenon associated with hot-electron-induced degradation.

Original languageEnglish
Title of host publicationExtended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages250-253
Number of pages4
ISBN (Electronic)0780343697, 9780780343696
DOIs
Publication statusPublished - 1998 Jan 1
Externally publishedYes
Event6th International Workshop on Computational Electronics, IWCE 1998 - Osaka, Japan
Duration: 1998 Oct 191998 Oct 21

Publication series

NameExtended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998
Volume1998-October

Other

Other6th International Workshop on Computational Electronics, IWCE 1998
CountryJapan
CityOsaka
Period98/10/1998/10/21

ASJC Scopus subject areas

  • Modelling and Simulation
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Mathematical Physics

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