Enhancement of TXRF intensity by using a reflector

We investigated the possibility of enhancing the TXRF intensity by applying an Si reflector. This Si reflector was attached just above the Si sample carrier. The angle between the reflector and the sample carrier was changed by tilting the reflector. We attempted to focus the primary x-rays on the analyzed area by multi-reflection effects between the reflector and the sample carrier. The intensity of Au Lα emitted from a thin layer of Au deposited on an Si sample carrier, was measured as a function of the angle between two Si plates. The observed peaks were explained from simple calculations, suggesting that the reflection of primary x-rays on both the reflector and the sample carrier results in a significant increases in x-ray intensities. In addition, Ar Kα emitted from the air, was reduced substantially by applying the reflector. This indicates that a reflector is also useful for reducing the x-ray background that originates from the air and the sample carrier.